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Authors: SYSOEV BI AGAPOV BL BEZRYADIN NN PROKOPOVA TV SHLYK YK

Citation: Bi. Sysoev et al., PREPARATION OF IN2TE3 INAS HETEROJUNCTIONS BY HETEROVALENT SUBSTITUTION/, Inorganic materials, 32(12), 1996, pp. 1267-1270

Authors: SYSOEV BI BEZRYADIN NN KOTOV GI AGAPOV BL STRYGIN VD

Citation: Bi. Sysoev et al., PASSIVATION OF THE GAAS(100) SURFACE BY III2-VI3(110) GALLIUM CHALCOGENIDES, Semiconductors, 29(1), 1995, pp. 12-16

Authors: SYSOEV BI BEZRYADIN NN BUDANOV AV PROKOPOVA TV AGAPOV BL

Citation: Bi. Sysoev et al., STRUCTURE OF INDIUM SULFIDE LAYERS ON INAS, Inorganic materials, 31(7), 1995, pp. 817-821

Authors: SYSOEV BI BEZRYADIN NN KOTOV GI STRYGIN VD

Citation: Bi. Sysoev et al., INFLUENCE OF THE SURFACE-TREATMENT OF GALLIUM-ARSENIDE IN CHALCOGEN VAPORS ON THE PROPERTIES OF SCHOTTKY BARRIERS IN ME-GAAS STRUCTURES, Semiconductors, 27(1), 1993, pp. 69-71