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Results: 1-25/34
Authors:
TU CW
BI WG
MA Y
ZHANG JP
WANG LW
HO ST
Citation: Cw. Tu et al., A NOVEL MATERIAL FOR LONG-WAVELENGTH LASERS - INNASP, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 510-513
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., ATOMIC-SCALE COMPOSITIONAL STRUCTURE OF INASP INP AND INNASP/INP HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2395-2398
Authors:
HASNAIN G
BI WG
SONG S
ANDERSON JT
MOLL N
SU CY
HOLLENHORST JN
BAYNES ND
ATHROLL I
AMOS S
ASH RM
Citation: G. Hasnain et al., BURIED-MESA AVALANCHE PHOTODIODES, IEEE journal of quantum electronics, 34(12), 1998, pp. 2321-2326
Authors:
ZUO SL
BI WG
TU CW
YU ET
Citation: Sl. Zuo et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF ATOMIC-SCALE CLUSTERING IN INASP INP HETEROSTRUCTURES/, Applied physics letters, 72(17), 1998, pp. 2135-2137
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, GROWTH AND CHARACTERIZATION OF INNXASYP1-X-Y INP STRAINED-QUANTUM-WELL STRUCTURES/, Applied physics letters, 72(10), 1998, pp. 1161-1163
Authors:
BI WG
MA Y
ZHANG JP
WANG LW
HO ST
TU CW
Citation: Wg. Bi et al., IMPROVED HIGH-TEMPERATURE PERFORMANCE OF 1.3-1.5-MU-M INNASP-INGAASP QUANTUM-WELL MICRODISK LASERS, IEEE photonics technology letters, 9(8), 1997, pp. 1072-1074
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INNXP1-X ON INP, Journal of electronic materials, 26(3), 1997, pp. 252-256
Authors:
BUYANOVA IA
LUNDSTROM T
BUYANOV AV
CHEN WM
BI WG
TU CW
Citation: Ia. Buyanova et al., STRONG EFFECTS OF CARRIER CONCENTRATION ON THE FERMI-EDGE SINGULARITYIN MODULATION-DOPED INP INXGA1-XAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(11), 1997, pp. 7052-7058
Authors:
NIKI S
FONS PJ
SHIBATA H
KURAFUJI T
YAMADA A
OKADA Y
OYANAGI H
BI WG
TU CW
Citation: S. Niki et al., EFFECTS OF STRAIN ON THE GROWTH AND PROPERTIES OF CUINSE2 EPITAXIAL-FILMS, Journal of crystal growth, 175, 1997, pp. 1051-1056
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, N INCORPORATION IN GANXP1-X AND INNXP1-X USING A RF N PLASMA SOURCE, Journal of crystal growth, 175, 1997, pp. 145-149
Authors:
LI NY
HSIN YM
BI WG
ASBECK PM
TU CW
Citation: Ny. Li et al., IN-SITU SELECTIVE ETCHING OF GAAS FOR IMPROVING (AL)GAAS INTERFACES USING TRIS-DIMETHYLAMINOARSENIC, Applied physics letters, 70(19), 1997, pp. 2589-2591
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, BOWING PARAMETER OF THE BAND-GAP ENERGY OF GANXAS1-X, Applied physics letters, 70(12), 1997, pp. 1608-1610
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, INXGA1-XAS IN(Y)GA(1-Y)AS(Z)P(1-Z) HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2918-2921
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, MATERIAL OPTIMIZATION FOR A POLARIZED ELECTRON SOURCE FROM STRAINED GAAS-BE GROWN ON AN INGAP PSEUDOSUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2282-2285
Authors:
MEI XB
BI WG
TU CW
CHOU LJ
HSIEH KC
Citation: Xb. Mei et al., QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2327-2330
Authors:
ZHANG JP
CHU DY
WU SL
BI WG
TIBERIO RC
TU CW
HO ST
Citation: Jp. Zhang et al., DIRECTIONAL LIGHT OUTPUT FROM PHOTONIC-WIRE MICROCAVITY SEMICONDUCTOR-LASERS, IEEE photonics technology letters, 8(8), 1996, pp. 968-970
Authors:
ZHANG JP
CHU DY
WU SL
BI WG
TIBERIO RC
JOSEPH RM
TAFLOVE A
TU CW
HO ST
Citation: Jp. Zhang et al., NANOFABRICATION OF 1-D PHOTONIC BANDGAP STRUCTURES ALONG A PHOTONIC WIRE, IEEE photonics technology letters, 8(4), 1996, pp. 491-493
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, GAS-SOURCE MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INGAAS INGAASP QUANTUM-WELL STRUCTURES ON INP/, Journal of electronic materials, 25(7), 1996, pp. 1049-1053
Authors:
MORGAN BA
TALIN AA
BI WG
KAVANAGH KL
WILLIAMS RS
TU CW
YASUDA T
YASUI T
SEGAWA Y
Citation: Ba. Morgan et al., COMPARISON OF AU CONTACTS TO SI, GAAS, INXGA1-XP, AND ZNSE MEASURED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Materials chemistry and physics, 46(2-3), 1996, pp. 224-229
Authors:
CHEN WM
BUYANOVA IA
BUYANOV AV
LUNDSTROM T
BI WG
TU CW
Citation: Wm. Chen et al., INTRINSIC DOPING - A NEW APPROACH FOR N-TYPE MODULATION DOPING IN INP-BASED HETEROSTRUCTURES, Physical review letters, 77(13), 1996, pp. 2734-2737
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, HIGHLY STRAINED INXGA1-XP GAP QUANTUM-WELLS GROWN ON GAP AND ON AN INX/2GA1-X/2P BUFFER LAYER BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 165(3), 1996, pp. 210-214
Authors:
BI WG
MEI XB
TU CW
Citation: Wg. Bi et al., GROWTH-STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 256-262
Authors:
BI WG
TU CW
Citation: Wg. Bi et Cw. Tu, N INCORPORATION IN INP AND BAND-GAP BOWING OF INNXP1-X, Journal of applied physics, 80(3), 1996, pp. 1934-1936
Authors:
BUYANOVA IA
CHEN WM
BUYANOV AV
BI WG
TU CW
Citation: Ia. Buyanova et al., OPTICAL-DETECTION OF QUANTUM OSCILLATIONS IN INP INGAAS QUANTUM STRUCTURES/, Applied physics letters, 69(6), 1996, pp. 809-811
Authors:
NIKI S
FONS PJ
YAMADA A
KURAFUJI T
CHICHIBU S
NAKANISHI H
BI WG
TU CW
Citation: S. Niki et al., HIGH-QUALITY CUINSE2 FILMS GROWN ON PSEUDO-LATTICE-MATCHED SUBSTRATESBY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(5), 1996, pp. 647-649