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Results:
1-11
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Results: 11
Authors:
GRUNTHANER FJ
BICKNELLTASSIUS R
DEELMAN P
GRUNTHANER PJ
BRYSON C
SNYDER E
GIULIANI JL
APRUZESE JP
KEPPLE P
Citation: Fj. Grunthaner et al., ULTRAHIGH-VACUUM ARCJET NITROGEN-SOURCE FOR SELECTED ENERGY EPITAXY OF GROUP-III NITRIDES BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1615-1620
Authors:
DOSHI B
BRENNAN KF
BICKNELLTASSIUS R
GRUNTHANER F
Citation: B. Doshi et al., THE EFFECT OF STRAIN-INDUCED POLARIZATION-FIELDS ON IMPACT IONIZATIONIN A MULTI-QUANTUM-WELL STRUCTURE, Applied physics letters, 73(19), 1998, pp. 2784-2786
Authors:
FOURNIER F
METZGER RA
DOOLITTLE A
BROWN AS
CARTERCOMAN C
JOKERST NM
BICKNELLTASSIUS R
Citation: F. Fournier et al., GROWTH DYNAMICS OF INGAAS GAAS BY MBE, Journal of crystal growth, 175, 1997, pp. 203-210
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BENZ RG
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF GAAS SUBSTRATE REMOVAL ETCHING WITH CITRIC ACID-H2O2 AND NH4OH-H2O2 FOR APPLICATION TO COMPLIANT SUBSTRATES, Journal of the Electrochemical Society, 144(2), 1997, pp. 29-31
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., METASTABILITY MODELING OF COMPLIANT SUBSTRATE CRITICAL THICKNESS USING EXPERIMENTAL STRAIN RELIEF DATA, Applied physics letters, 71(10), 1997, pp. 1344-1346
Authors:
CARTERCOMAN C
BICKNELLTASSIUS R
BROWN AS
JOKERST NM
Citation: C. Cartercoman et al., ANALYSIS OF IN0.07GA0.93AS LAYERS ON GAAS COMPLIANT SUBSTRATES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION, Applied physics letters, 70(13), 1997, pp. 1754-1756
Authors:
CARTERCOMAN C
BROWN AS
BICKNELLTASSIUS R
JOKERST NM
FOURNIER F
DAWSON DE
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - MODIFICATION OF GROWTH-KINETICS VIA PATTERNED, COMPLIANT SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2170-2174
Authors:
CARTERCOMAN C
BROWN AS
JOKERST NM
DAWSON DE
BICKNELLTASSIUS R
FENG ZC
RAJKUMAR KC
DAGNALL G
Citation: C. Cartercoman et al., STRAIN ACCOMMODATION IN MISMATCHED LAYERS BY MOLECULAR-BEAM EPITAXY -INTRODUCTION OF A NEW COMPLIANT SUBSTRATE TECHNOLOGY, Journal of electronic materials, 25(7), 1996, pp. 1044-1048
Authors:
TRAN TK
PARIKH A
KELZ T
TOMM JW
HOERSTEL W
SCHAFER P
WAGNER BK
PEARSON SD
BICKNELLTASSIUS R
SUMMERS CJ
Citation: Tk. Tran et al., PROPERTIES OF HG0.7CD0.3TE CDTE SUPERLATTICES WITH SEMICONDUCTING WELLS/, Journal of crystal growth, 159(1-4), 1996, pp. 1080-1084
Authors:
CARTERCOMAN C
BROWN AS
BICKNELLTASSIUS R
JOKERST NM
ALLEN M
Citation: C. Cartercoman et al., STRAIN-MODULATED EPITAXY - A FLEXIBLE APPROACH TO 3-D BAND-STRUCTURE ENGINEERING WITHOUT SURFACE PATTERNING, Applied physics letters, 69(2), 1996, pp. 257-259
Authors:
TOMM JW
KELZ T
HOERSTEL W
HERRMANN KH
TRAN TK
BICKNELLTASSIUS R
WAGNER BK
BENZ RG
SUMMERS CJ
Citation: Jw. Tomm et al., MAGNETOLUMINESCENCE SPECTROSCOPIC INVESTIGATIONS IN HG0.7CD0.3TE HE0.15CD0.85TE SUPERLATTICES/, Semiconductor science and technology, 10(4), 1995, pp. 469-475
Risultati:
1-11
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