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Results: 1-11 |
Results: 11
LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES
Authors: ANGHEL L OUISSE T BILLON T LASSAGNE P JAUSSAUD C
Citation: L. Anghel et al., LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1494-1496
OBSERVATION OF RANDOM TELEGRAPH SIGNAL IN SIC SCHOTTKY DIODES
Authors: OUISSE T PLATEL E BILLON T LAHRECHE H
Citation: T. Ouisse et al., OBSERVATION OF RANDOM TELEGRAPH SIGNAL IN SIC SCHOTTKY DIODES, Electronics Letters, 33(22), 1997, pp. 1907-1909
ELECTRICAL CHARACTERIZATION OF EPITAXIAL 6H-SIC BY ADMITTANCE SPECTROSCOPY
Authors: RAYNAUD C DUCROQUET F BROUNKOV PN GUILLOT G PORTER LM DAVIS RF JAUSSAUD C BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF EPITAXIAL 6H-SIC BY ADMITTANCE SPECTROSCOPY, Materials science and technology, 12(1), 1996, pp. 94-97
EXPERIMENTAL-EVIDENCE FOR THE EXISTENCE OF A MOBILITY EDGE IN SILICON-CARBIDE INVERSION-LAYERS
Authors: OUISSE T BILLON T
Citation: T. Ouisse et T. Billon, EXPERIMENTAL-EVIDENCE FOR THE EXISTENCE OF A MOBILITY EDGE IN SILICON-CARBIDE INVERSION-LAYERS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 71(3), 1995, pp. 413-426
DETERMINATION OF DONOR AND ACCEPTOR LEVEL ENERGIES BY ADMITTANCE SPECTROSCOPY IN 6H SIC
Authors: RAYNAUD C RICHIER C BROUNKOV PN DUCROQUET F GUILLOT G PORTER LM DAVIS RF JAUSSAUD C BILLON T
Citation: C. Raynaud et al., DETERMINATION OF DONOR AND ACCEPTOR LEVEL ENERGIES BY ADMITTANCE SPECTROSCOPY IN 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 122-125
ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/
Authors: BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BILLON T LASSAGNE P
Citation: C. Raynaud et al., ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE, Microelectronic engineering, 28(1-4), 1995, pp. 209-212
COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N BILLON T JAUSSAUD C
Citation: C. Raynaud et al., COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES, Applied physics letters, 66(18), 1995, pp. 2340-2342
INSTABILITIES IN 6H-SIC MOS STRUCTURES
Authors: RAYNAUD C AUTRQAN JL SEIGNEUR F JAUSSAUD C BILLON T GUILLOT G BALLAND B
Citation: C. Raynaud et al., INSTABILITIES IN 6H-SIC MOS STRUCTURES, Journal de physique. III, 4(5), 1994, pp. 937-952
ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: RAYNAUD C AUTRAN JL BALLAND B GUILLOT G JAUSSAUD C BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 993-997
HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
Authors: BILLON T OUISSE T LASSAGNE P JASSAUD C PONTHENIER JL BAUD L BECOURT N MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171
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