ACNP - Italian Periodicals Catalogue

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Results: 1-15 |

Results: 15

THERMAL-PROPERTIES OF POROUS SILICON LAYERS

Authors: BENEDETTO G BOARINO L BRUNETTO N ROSSI A SPAGNOLO R AMATO G

Citation: G. Benedetto et al., THERMAL-PROPERTIES OF POROUS SILICON LAYERS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 383-393

ON THE ROLE OF GERMANIUM IN POROUS SILICON-GERMANIUM LUMINESCENCE

Authors: AMATO G ROSSI AM BOARINO L BRUNETTO N

Citation: G. Amato et al., ON THE ROLE OF GERMANIUM IN POROUS SILICON-GERMANIUM LUMINESCENCE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 395-403

EVALUATION OF THERMAL-CONDUCTIVITY OF POROUS SILICON LAYERS BY A PHOTOACOUSTIC METHOD

Authors: BENEDETTO G BOARINO L SPAGNOLO R

Citation: G. Benedetto et al., EVALUATION OF THERMAL-CONDUCTIVITY OF POROUS SILICON LAYERS BY A PHOTOACOUSTIC METHOD, Applied physics A: Materials science & processing, 64(2), 1997, pp. 155-159

PHOTOTHERMAL AND PHOTOACOUSTIC CHARACTERIZATION OF POROUS SILICON

Authors: AMATO G BENEDETTO G BOARINO L BRUNETTO N SPAGNOLO R

Citation: G. Amato et al., PHOTOTHERMAL AND PHOTOACOUSTIC CHARACTERIZATION OF POROUS SILICON, Optical engineering, 36(2), 1997, pp. 423-431

POROUS SILICON LAYER PERMEATED WITH SN-V MIXED OXIDES FOR HYDROCARBONSENSOR FABRICATION

Authors: ANGELUCCI R POGGI A DORI L CARDINALI GC PARISINI A PIZZOCHERO G TRIFIRO F CAVANI F CRITELLI C BOARINO L

Citation: R. Angelucci et al., POROUS SILICON LAYER PERMEATED WITH SN-V MIXED OXIDES FOR HYDROCARBONSENSOR FABRICATION, Thin solid films, 297(1-2), 1997, pp. 43-47

BRILLOUIN-SCATTERING OF POROUS SILICON

Authors: BEGHI MG BOTTANI CE GHISLOTTI G AMATO G BOARINO L

Citation: Mg. Beghi et al., BRILLOUIN-SCATTERING OF POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 110-113

DEEP COLD JUNCTIONS BY POROUS SILICON IMPREGNATION

Authors: AMATO G BOARINO L BRUNETTO N TURNATURI M

Citation: G. Amato et al., DEEP COLD JUNCTIONS BY POROUS SILICON IMPREGNATION, Thin solid films, 297(1-2), 1997, pp. 321-324

QUANTUM CONFINEMENT AND DISORDER IN POROUS SILICON - EFFECTS ON THE OPTICAL AND TRANSPORT-PROPERTIES

Authors: AMATO G BOARINO L BRUNETTO N ROSSI AM

Citation: G. Amato et al., QUANTUM CONFINEMENT AND DISORDER IN POROUS SILICON - EFFECTS ON THE OPTICAL AND TRANSPORT-PROPERTIES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1111-1119

INVESTIGATION OF THE NONRADIATIVE PROCESSES IN POROUS SILICON

Authors: AMATO G BOARINO L BRUNETTO N ROSSI AM PARISINI A

Citation: G. Amato et al., INVESTIGATION OF THE NONRADIATIVE PROCESSES IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 51-54

DRYING OF POROUS SILICON - A RAMAN, ELECTRON-MICROSCOPY, AND PHOTOLUMINESCENCE STUDY

Authors: AMATO G BULLARA V BRUNETTO N BOARINO L

Citation: G. Amato et al., DRYING OF POROUS SILICON - A RAMAN, ELECTRON-MICROSCOPY, AND PHOTOLUMINESCENCE STUDY, Thin solid films, 276(1-2), 1996, pp. 204-207

MODULATED PHOTOTHERMAL REFLECTANCE ON POROUS SILICON

Authors: AMATO G BOARINO L BENEDETTO G SPAGNOLO R

Citation: G. Amato et al., MODULATED PHOTOTHERMAL REFLECTANCE ON POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 111-114

THE OPTICAL-RESPONSE ABOVE THE BAND-GAP OF LIGHT-EMITTING POROUS SILICON, AS INVESTIGATED BY PHOTOACOUSTIC-SPECTROSCOPY

Authors: AMATO G SPAGNOLO G BOARINO L GAVIOSO R BENEDETTO G

Citation: G. Amato et al., THE OPTICAL-RESPONSE ABOVE THE BAND-GAP OF LIGHT-EMITTING POROUS SILICON, AS INVESTIGATED BY PHOTOACOUSTIC-SPECTROSCOPY, Journal de physique. IV, 4(C7), 1994, pp. 125-128

APPLICATION OF A PHOTOTHERMAL DISPLACEMENT TECHNIQUE FOR THE CHARACTERIZATION OF DIAMOND-LIKE CARBON-FILMS

Authors: AMATO G BENEDETTO G BOARINO L MARINGELLI M SPAGNOLO R

Citation: G. Amato et al., APPLICATION OF A PHOTOTHERMAL DISPLACEMENT TECHNIQUE FOR THE CHARACTERIZATION OF DIAMOND-LIKE CARBON-FILMS, Journal de physique. IV, 4(C7), 1994, pp. 237-240

MODULATED PHOTOTHERMAL REFLECTANCE CHARACTERIZATION OF DOPED SILICON-WAFERS

Authors: BENEDETTO G BOARINO L SPAGNOLO R

Citation: G. Benedetto et al., MODULATED PHOTOTHERMAL REFLECTANCE CHARACTERIZATION OF DOPED SILICON-WAFERS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 777-783

PHOTOTHERMAL DISPLACEMENT TECHNIQUE - A METHOD TO DETERMINE THE VARIATION OF THERMAL-CONDUCTIVITY VERSUS TEMPERATURE IN SILICON

Authors: BENEDETTO G SPAGNOLO R BOARINO L

Citation: G. Benedetto et al., PHOTOTHERMAL DISPLACEMENT TECHNIQUE - A METHOD TO DETERMINE THE VARIATION OF THERMAL-CONDUCTIVITY VERSUS TEMPERATURE IN SILICON, Review of scientific instruments, 64(8), 1993, pp. 2229-2232

Risultati: 1-15 |