Authors:
BENEDETTO G
BOARINO L
BRUNETTO N
ROSSI A
SPAGNOLO R
AMATO G
Citation: G. Benedetto et al., THERMAL-PROPERTIES OF POROUS SILICON LAYERS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 383-393
Citation: G. Amato et al., ON THE ROLE OF GERMANIUM IN POROUS SILICON-GERMANIUM LUMINESCENCE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 395-403
Citation: G. Benedetto et al., EVALUATION OF THERMAL-CONDUCTIVITY OF POROUS SILICON LAYERS BY A PHOTOACOUSTIC METHOD, Applied physics A: Materials science & processing, 64(2), 1997, pp. 155-159
Authors:
ANGELUCCI R
POGGI A
DORI L
CARDINALI GC
PARISINI A
PIZZOCHERO G
TRIFIRO F
CAVANI F
CRITELLI C
BOARINO L
Citation: R. Angelucci et al., POROUS SILICON LAYER PERMEATED WITH SN-V MIXED OXIDES FOR HYDROCARBONSENSOR FABRICATION, Thin solid films, 297(1-2), 1997, pp. 43-47
Citation: G. Amato et al., QUANTUM CONFINEMENT AND DISORDER IN POROUS SILICON - EFFECTS ON THE OPTICAL AND TRANSPORT-PROPERTIES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1111-1119
Citation: G. Amato et al., DRYING OF POROUS SILICON - A RAMAN, ELECTRON-MICROSCOPY, AND PHOTOLUMINESCENCE STUDY, Thin solid films, 276(1-2), 1996, pp. 204-207
Authors:
AMATO G
SPAGNOLO G
BOARINO L
GAVIOSO R
BENEDETTO G
Citation: G. Amato et al., THE OPTICAL-RESPONSE ABOVE THE BAND-GAP OF LIGHT-EMITTING POROUS SILICON, AS INVESTIGATED BY PHOTOACOUSTIC-SPECTROSCOPY, Journal de physique. IV, 4(C7), 1994, pp. 125-128
Authors:
AMATO G
BENEDETTO G
BOARINO L
MARINGELLI M
SPAGNOLO R
Citation: G. Amato et al., APPLICATION OF A PHOTOTHERMAL DISPLACEMENT TECHNIQUE FOR THE CHARACTERIZATION OF DIAMOND-LIKE CARBON-FILMS, Journal de physique. IV, 4(C7), 1994, pp. 237-240
Citation: G. Benedetto et al., MODULATED PHOTOTHERMAL REFLECTANCE CHARACTERIZATION OF DOPED SILICON-WAFERS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 777-783
Citation: G. Benedetto et al., PHOTOTHERMAL DISPLACEMENT TECHNIQUE - A METHOD TO DETERMINE THE VARIATION OF THERMAL-CONDUCTIVITY VERSUS TEMPERATURE IN SILICON, Review of scientific instruments, 64(8), 1993, pp. 2229-2232