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Results: 1-9 |
Results: 9
SB-BASED MONOLITHIC VCSEL OPERATING NEAR 2.2-MU-M AT ROOM-TEMPERATURE
Authors: BARANOV AN ROUILLARD Y BOISSIER G GRECH P GAILLARD S ALIBERT C
Citation: An. Baranov et al., SB-BASED MONOLITHIC VCSEL OPERATING NEAR 2.2-MU-M AT ROOM-TEMPERATURE, Electronics Letters, 34(3), 1998, pp. 281-282
HIGH REFLECTIVITY TE-DOPED GAASSB ALASSB BRAGG MIRROR FOR 1.5-MU-M SURFACE-EMITTING LASERS/
Authors: GENTY F ALMUNEAU G CHUSSEAU L BOISSIER G MALZAC JP SALET P JACQUET J
Citation: F. Genty et al., HIGH REFLECTIVITY TE-DOPED GAASSB ALASSB BRAGG MIRROR FOR 1.5-MU-M SURFACE-EMITTING LASERS/, Electronics Letters, 33(2), 1997, pp. 140-142
OBSERVATION OF ROOM-TEMPERATURE LASER-EMISSION FROM TYPE-III INAS GASB MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: BARANOV AN BERTRU N CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., OBSERVATION OF ROOM-TEMPERATURE LASER-EMISSION FROM TYPE-III INAS GASB MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 735-737
ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: BARANOV AN CUMINAL Y BOISSIER G NICOLAS JC LAZZARI JL ALIBERT C JOULLIE A
Citation: An. Baranov et al., ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(8), 1996, pp. 1185-1188
LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/
Authors: BARANOV AN CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/, Electronics Letters, 32(24), 1996, pp. 2279-2280
HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY/
Authors: GRUNBERG P BARANOV A FOUILLANT C LAZZARI JL GRECH P BOISSIER G ALIBERT C JOULLIE A
Citation: P. Grunberg et al., HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY/, Electronics Letters, 30(4), 1994, pp. 312-313
HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 (VOL 30, PG 312, 1994)
Authors: GRUNBERG P BARANOV A FOUILLANT C LAZZARI JL GRECH P BOISSIER G ALIBERT C JOULLIE A
Citation: P. Grunberg et al., HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 (VOL 30, PG 312, 1994), Electronics Letters, 30(18), 1994, pp. 1552-1552
CHARACTERIZATION BELOW THRESHOLD OF GAINA SSB GAALASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.37 MU-M/
Authors: LECLERCQ JL GRUNBERG P BOISSIER G FOUILLANT C SADIK S MARTIN P LAZZARI JL JOULLIE AM JOULLIE A
Citation: Jl. Leclercq et al., CHARACTERIZATION BELOW THRESHOLD OF GAINA SSB GAALASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.37 MU-M/, Journal de physique. III, 3(10), 1993, pp. 1963-1979
LONG-WAVELENGTH STRAINED-LAYER INAS GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE/
Authors: TOURNIE E GRUNBERG P FOUILLANT C KADRET S BOISSIER G BARANOV A JOULLIE A GAUMONTGOARIN E PLOOG KH
Citation: E. Tournie et al., LONG-WAVELENGTH STRAINED-LAYER INAS GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE/, Electronics Letters, 29(14), 1993, pp. 1255-1257
Risultati: 1-9 |