Citation: S. Guha et Na. Bojarczuk, GAN BASED LIGHT-EMITTING-DIODES GROWN ON SI(111) BY MOLECULAR-BEAM EPITAXY, Electronics Letters, 33(23), 1997, pp. 1986-1987
Citation: S. Guha et al., MG IN GAN - INCORPORATION OF A VOLATILE SPECIES AT HIGH-TEMPERATURES DURING MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(12), 1997, pp. 1685-1687
Citation: S. Guha et al., SURFACE LIFETIMES OF GA AND GROWTH-BEHAVIOR ON GAN(0001) SURFACES DURING MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(19), 1996, pp. 2879-2881