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Results:
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Results: 4
CHARGE-CARRIER EXCLUSION IN INAS
Authors:
BOLGOV SS MALYUTENKO VK SAVCHENKO AP
Citation:
Ss. Bolgov et al., CHARGE-CARRIER EXCLUSION IN INAS, Semiconductors, 31(5), 1997, pp. 444-445
ELECTROLUMINESCENCE SPECTRA OF VARIABLE-GAP CDXHG1-XTE CDTE STRUCTURES AT T=300-K
Authors:
BOLGOV SS VARDANYAN BR MALYUTENKO VK PIPA VI SAVCHENKO AP YUNOVICH AE
Citation:
Ss. Bolgov et al., ELECTROLUMINESCENCE SPECTRA OF VARIABLE-GAP CDXHG1-XTE CDTE STRUCTURES AT T=300-K, Semiconductors, 28(4), 1994, pp. 394-396
PRESSURE-DEPENDENCE OF THE LUMINESCENCE OF CDXHG1-XTE CDTE HETEROSTRUCTURES/
Authors:
BOLGOV SS KISLYI VP MALYUTENKO VK SAVCHENKO AP
Citation:
Ss. Bolgov et al., PRESSURE-DEPENDENCE OF THE LUMINESCENCE OF CDXHG1-XTE CDTE HETEROSTRUCTURES/, Semiconductors, 27(1), 1993, pp. 93-95
GALVANOMAGNETIC LUMINESCENCE OF DOPED SEM ICONDUCTORS
Authors:
BOLGOV SS PIPA VI SALYUK OY
Citation:
Ss. Bolgov et al., GALVANOMAGNETIC LUMINESCENCE OF DOPED SEM ICONDUCTORS, UKRAINSKII FIZICHESKII ZHURNAL, 38(9), 1993, pp. 1327-1333
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