AAAAAA
Results:
1-13
|
Results: 13
Authors:
ALPEROVICH VL
BOLKHOVITYANOV YB
JAROSHEVICH AS
KATKOV AV
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Vl. Alperovich et al., SHIFTS AND SPLITTING OF ENERGY-BANDS IN ELASTICALLY STRAINED INGAP GAAS(111)B EPITAXIAL-FILMS/, Journal of applied physics, 82(3), 1997, pp. 1214-1219
Authors:
ZHURAVLEV KS
PETROV DV
BOLKHOVITYANOV YB
RUDAJA NS
Citation: Ks. Zhuravlev et al., EFFECT OF SURFACE ACOUSTIC-WAVES ON LOW-TEMPERATURE PHOTOLUMINESCENCEOF GAAS, Applied physics letters, 70(25), 1997, pp. 3389-3391
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
REVENKO MA
SCHEIBLER HE
TEREKHOV AS
Citation: Yb. Bolkhovityanov et al., SHEAR DEFORMATION POTENTIAL OF ELASTICALLY STRAINED INGAP GAAS(111)B AND INGAASP/GAAS(111)B FILMS/, Semiconductor science and technology, 11(12), 1996, pp. 1847-1849
Authors:
DRESCHER P
PLUTZER S
REICHERT E
SCHEMIES M
ALPEROVICH VL
BOLKHOVITYANOV YB
JAROSHEVICH AS
PAULISH AG
SCHEIBLER HE
TEREKHOV AS
Citation: P. Drescher et al., EMISSION OF SPIN-POLARIZED ELECTRONS FROM STRAINED INGAP AND INGAASP PHOTOCATHODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 169-173
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
NOMEROTSKY NV
REVENKO MA
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
NOMEROTSKY NV
REVENKO MA
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., HIGHLY STRAINED INGAASP FILMS WITH HIGH CRITICAL THICKNESSES, Journal of applied physics, 79(10), 1996, pp. 7636-7639
Authors:
BOLKHOVITYANOV YB
Citation: Yb. Bolkhovityanov, ELASTICALLY STRAINED INGAASP FILMS GROWN BY LPE AND CONCEPTION OF STRESS-INDUCED SUPERCOOLING, Physica status solidi. a, Applied research, 151(2), 1995, pp. 363-370
Authors:
BOLKHOVITYANOV YB
GILINSKY AM
NOMEROTSKY NV
TRUKHANOV EM
JAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INXGA1-XP AND INXGA1-XASYP1-Y SOLID-SOLUTIONS ON GAAS SUBSTRATES, Journal of crystal growth, 149(1-2), 1995, pp. 17-22
Authors:
BOLKHOVITYANOV YB
ALPEROVICH VL
JAROSHEVICH AS
NOMEROTSKY NV
PAULISH AG
TEREKHOV AS
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., LIQUID PHASE EPITAXIAL-GROWTH OF ELASTICALLY STRAINED INGAASP LAYERS FOR SPIN-POLARIZED ELECTRON SOURCES, Journal of crystal growth, 146(1-4), 1995, pp. 310-313
Authors:
BOLKHOVITYANOV YB
JAROSHEVICH AS
NOMEROTSKY NV
REVENKO MA
TRUKHANOV EM
Citation: Yb. Bolkhovityanov et al., INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2486-2487
NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE
Authors:
ALPEROVICH VL
BOLKHOVITYANOV YB
PAULISH AG
TEREKHOV AS
Citation: Vl. Alperovich et al., NEW MATERIAL FOR PHOTOEMISSION ELECTRON SOURCE - SEMICONDUCTOR ALLOY INGAASP GROWN ON GAAS SUBSTRATE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 340(3), 1994, pp. 429-435
Authors:
BOLKHOVITYANOV YB
GILINSKII AM
NOMEROTSKII NV
TRUKHANOV EM
YAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., PSEUDOMORPHOUS TENSED INGAASP FILMS WITH ELASTIC DEFORMATIONS OF 0.85-PERCENT AND WIDTH OF 0.1-0.3 MU-M PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(13), 1993, pp. 5-8
Authors:
BOLKHOVITYANOV YB
RUDAYA NS
YUDAEV VI
Citation: Yb. Bolkhovityanov et al., EFFECT OF TREATMENT OF THE SUBSTRATE SURFACE ON THE INITIAL-STAGES OFFORMATION OF GALLIUM-ARSENIDE FILMS, Inorganic materials, 29(1), 1993, pp. 21-25
Risultati:
1-13
|