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Results:
1-13
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Results: 13
Authors:
BONAFOS C
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., OSTWALD RIPENING OF END-OF-RANGE DEFECTS IN SILICON, Journal of applied physics, 83(6), 1998, pp. 3008-3017
Authors:
BONAFOS C
GARRIDO B
LOPEZ M
ROMANORODRIGUEZ A
GONZALEZVARONA O
PEREZRODRIGUEZ A
MORANTE JR
Citation: C. Bonafos et al., ION-BEAM SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF ZNS NANOCRYSTALS IN SIO2, Applied physics letters, 72(26), 1998, pp. 3488-3490
Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
BONAFOS C
OMRI M
DEMAUDUIT B
BENASSAYAG G
CLAVERIE A
ALQUIER D
MARTINEZ A
MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
Authors:
BONAFOS C
CLAVERIE A
ALQUIER D
BERGAUD C
MARTINEZ A
LAANAB L
MATHIOT D
Citation: C. Bonafos et al., THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON, Applied physics letters, 71(3), 1997, pp. 365-367
Authors:
FAYE MM
ALTIBELLI A
BONAFOS C
CLAVERIE A
Citation: Mm. Faye et al., STOICHIOMETRIC DISTURBANCES IN MULTI-ATOMIC MULTILAYERED STRUCTURES DUE TO ION-IMPLANTATION THROUGH MASK OPENINGS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 52-55
Authors:
OMRI M
BONAFOS C
CLAVERIE A
NEJIM A
CRISTIANO F
ALQUIER D
MARTINEZ A
COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
Authors:
BONAFOS C
ALQUIER D
MARTINEZ A
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., TED OF BORON IN THE PRESENCE OF EOR DEFECTS - THE USE OF THE THEORY OF OSTWALD RIPENING TO CALCULATE SI-INTERSTITIAL SUPERSATURATION IN THEVICINITY OF EXTRINSIC DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 129-132
Authors:
CLAVERIE A
LAANAB L
BONAFOS C
BERGAUD C
MARTINEZ A
MATHIOT D
Citation: A. Claverie et al., ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 202-209
Authors:
LAANAB L
BERGAUD C
BONAFOS C
MARTINEZ A
CLAVERIE A
Citation: L. Laanab et al., VARIATION OF END-OF-RANGE DENSITY WITH ION-BEAM ENERGY AND THE PREDICTIONS OF THE EXCESS INTERSTITIALS MODEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 236-240
Authors:
BONAFOS C
MARTINEZ A
FAYE MM
BERGAUD C
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF DOPANT IN PREAMORPHISED SI - THE ROLEOF EOR DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 222-226
Authors:
PICHLER P
RYSSEL H
PLOSS R
BONAFOS C
CLAVERIE A
Citation: P. Pichler et al., PHOSPHORUS-ENHANCED DIFFUSION OF ANTIMONY DUE TO GENERATION OF SELF-INTERSTITIALS, Journal of applied physics, 78(3), 1995, pp. 1623-1629
Authors:
LAANAB L
MARTINEZ A
ESSAID A
BONAFOS C
CLAVERIE A
Citation: L. Laanab et al., MINIMIZATION OF THE DENSITY OF EOR DEFECTS AFTER PREAMORPHISATION ANDTHERMAL ANNEALING, Annales de chimie, 19(7-8), 1994, pp. 459-464
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