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Results: 1-25 |
Results: 25
WAVE-GUIDE PROPERTIES OF OPTICAL STRUCTURES FABRICATED BY OXIDATION OF POROUS SILICON
Authors: TOMOV AV FILIPPOV VV BONDARENKO VP
Citation: Av. Tomov et al., WAVE-GUIDE PROPERTIES OF OPTICAL STRUCTURES FABRICATED BY OXIDATION OF POROUS SILICON, Technical physics letters, 23(5), 1997, pp. 410-411
LUMINESCENCE OF ERBIUM-DOPED POROUS SILICON
Authors: BONDARENKO VP VOROZOV NN DOLGII LN DOROFEEV AM KAZYUCHITS NM LESHOK AA TROYANOVA GN
Citation: Vp. Bondarenko et al., LUMINESCENCE OF ERBIUM-DOPED POROUS SILICON, Technical physics letters, 23(1), 1997, pp. 3-4
PHOTOLUMINESCENCE AND PHOTOEXCITATION SPECTRA OF POROUS SILICON SUBJECTED TO ANODIC-OXIDATION AND ETCHING
Authors: FILIPPOV VV PERSHUKEVICH PP BONDARENKO VP
Citation: Vv. Filippov et al., PHOTOLUMINESCENCE AND PHOTOEXCITATION SPECTRA OF POROUS SILICON SUBJECTED TO ANODIC-OXIDATION AND ETCHING, Semiconductors, 31(9), 1997, pp. 974-979
STRESS-STRAIN STATE OF A SPHERICAL LAYER WITH A CIRCULAR DISLOCATION LOOP
Authors: BONDARENKO VP LITOSHENKO NV
Citation: Vp. Bondarenko et Nv. Litoshenko, STRESS-STRAIN STATE OF A SPHERICAL LAYER WITH A CIRCULAR DISLOCATION LOOP, International applied mechanics, 33(7), 1997, pp. 525-531
HYDROGEN-CONTAINING CHEMICALLY ACTIVE GAS MEDIUM FOR CONTROLLING CARBON CONTENT OF TUNGSTEN-BASE HARD ALLOYS
Authors: BONDARENKO VP PAVLOTSKAYA EG
Citation: Vp. Bondarenko et Eg. Pavlotskaya, HYDROGEN-CONTAINING CHEMICALLY ACTIVE GAS MEDIUM FOR CONTROLLING CARBON CONTENT OF TUNGSTEN-BASE HARD ALLOYS, International journal of hydrogen energy, 22(2-3), 1997, pp. 205-212
LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES
Authors: MAIELLO G LAMONICA S FERRARI A MASINI G BONDARENKO VP DOROFEEV AM KAZUCHITS NM
Citation: G. Maiello et al., LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES, Thin solid films, 297(1-2), 1997, pp. 311-313
TOTAL GAMMA-DOSE CHARACTERISTICS OF CMOS DEVICES IN SOI STRUCTURES BASED ON OXIDIZED POROUS SILICON
Authors: BONDARENKO VP BOGATIREV YV COLINGE JP DOLGYI LN DOROFEEV AM YAKOVTSEVA VA
Citation: Vp. Bondarenko et al., TOTAL GAMMA-DOSE CHARACTERISTICS OF CMOS DEVICES IN SOI STRUCTURES BASED ON OXIDIZED POROUS SILICON, IEEE transactions on nuclear science, 44(5), 1997, pp. 1719-1723
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/, Journal of the Electrochemical Society, 144(5), 1997, pp. 1890-1890
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/, Journal of the Electrochemical Society, 144(4), 1997, pp. 1463-1468
LUMINESCENCE OF POROUS SILICON ALLOYED WI TH ERBIUM
Authors: BONDARENKO VP VOROZOV NN DOLGII LN DOROFEEV AM KAZYUCHITS NM LESHOK AA TROYANOVA GN
Citation: Vp. Bondarenko et al., LUMINESCENCE OF POROUS SILICON ALLOYED WI TH ERBIUM, Pis'ma v Zurnal tehniceskoj fiziki, 22(24), 1996, pp. 84-87
SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF
Authors: GORBACH TY RUDKO GY SMERTENKO PS SVECHNIKOV SV VALAKH MY BONDARENKO VP DOROFEEV AM
Citation: Ty. Gorbach et al., SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF, Semiconductor science and technology, 11(4), 1996, pp. 601-606
EXCITATION SPECTROSCOPY OF ANODICALLY OXIDIZED POROUS SILICON
Authors: FILIPPOV VV BONDARENKO VP PERSHUKEVICH PP
Citation: Vv. Filippov et al., EXCITATION SPECTROSCOPY OF ANODICALLY OXIDIZED POROUS SILICON, Journal of luminescence, 69(2), 1996, pp. 115-119
HIGH-TEMPERATURE SYNTHESIS OF TUNGSTEN CARBIDE IN A METHANE-HYDROGEN GAS MEDIUM
Authors: BONDARENKO VP PAVLOTSKAYA EG
Citation: Vp. Bondarenko et Eg. Pavlotskaya, HIGH-TEMPERATURE SYNTHESIS OF TUNGSTEN CARBIDE IN A METHANE-HYDROGEN GAS MEDIUM, Powder metallurgy and metal ceramics, 34(9-10), 1995, pp. 508-512
OPTICAL WAVE-GUIDE BASED ON OXIDIZED POROUS SILICON
Authors: BONDARENKO VP DOROFEEV AM KAZUCHITS NM
Citation: Vp. Bondarenko et al., OPTICAL WAVE-GUIDE BASED ON OXIDIZED POROUS SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 447-450
ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS
Authors: DOROFEEV AM GAPONENKO NV BONDARENKO VP BACHILO EE KAZUCHITS NM LESHOK AA TROYANOVA GN VOROSOV NN BORISENKO VE GNASER H BOCK W BECKER P OECHSNER H
Citation: Am. Dorofeev et al., ERBIUM LUMINESCENCE IN POROUS SILICON DOPED FROM SPIN-ON FILMS, Journal of applied physics, 77(6), 1995, pp. 2679-2683
PHOTOLUMINESCENCE OF ANODICALLY OXIDIZED POROUS SILICON
Authors: FILIPPOV VV PERSHUKEVICH PP BONDARENKO VP DOROFEEV AM
Citation: Vv. Filippov et al., PHOTOLUMINESCENCE OF ANODICALLY OXIDIZED POROUS SILICON, Physica status solidi. b, Basic research, 184(2), 1994, pp. 573-580
CONTROL OF PARAMETERS OF POROUS SILICON L UMINESCENCE IN THE VISIBLE SPECTRUM DOMAIN
Authors: BONDARENKO VP DOROFEEV AM LEVCHENKO VI LUKOMSKII AI POSTNOVA LI
Citation: Vp. Bondarenko et al., CONTROL OF PARAMETERS OF POROUS SILICON L UMINESCENCE IN THE VISIBLE SPECTRUM DOMAIN, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 61-65
HETEROEPITAXY OF LEAD SULFIDE ON SILICON
Authors: BONDARENKO VP VOROZOV NN DIKAREVA VV DOROFEEV AM LEVCHENKO VI POSTNOVA LI TROYANOVA GN
Citation: Vp. Bondarenko et al., HETEROEPITAXY OF LEAD SULFIDE ON SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 20(10), 1994, pp. 51-55
SPECTRAL CHARACTERISTICS OF VISIBLE-LIGHT EMISSION FROM POROUS SI - QUANTUM CONFINEMENT OR IMPURITY EFFECT
Authors: BONDARENKO VP BORISENKO VE DOROFEEV AM GERMANENKO IN GAPONENKO SV
Citation: Vp. Bondarenko et al., SPECTRAL CHARACTERISTICS OF VISIBLE-LIGHT EMISSION FROM POROUS SI - QUANTUM CONFINEMENT OR IMPURITY EFFECT, Journal of applied physics, 75(5), 1994, pp. 2727-2729
TIME-RESOLVED SPECTROSCOPY OF VISIBLY EMITTING POROUS SILICON
Authors: GAPONENKO SV GERMANENKO IN PETROV EP STUPAK AP BONDARENKO VP DOROFEEV AM
Citation: Sv. Gaponenko et al., TIME-RESOLVED SPECTROSCOPY OF VISIBLY EMITTING POROUS SILICON, Applied physics letters, 64(1), 1994, pp. 85-87
PHOTOLUMINESCENCE AND EXCITATION-SPECTRA OF POROUS SILICON SUBJECTED TO LONG-TIME AIR IMPREGNATION
Authors: BONDARENKO VP DOROFEEV AM FILIPPOV VV LABUNOV VA PERSHUKEVICH PP
Citation: Vp. Bondarenko et al., PHOTOLUMINESCENCE AND EXCITATION-SPECTRA OF POROUS SILICON SUBJECTED TO LONG-TIME AIR IMPREGNATION, Physica status solidi. b, Basic research, 179(1), 1993, pp. 53-56
INTEGRAL OPTICAL WAVE-GUIDE BASED ON PORO US SILICON
Authors: BONDARENKO VP VARICHENKO VS DOROFEEV AM KAZYUCHITS NM LABUNOV VA STELMAKH VF
Citation: Vp. Bondarenko et al., INTEGRAL OPTICAL WAVE-GUIDE BASED ON PORO US SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 19(14), 1993, pp. 73-76
IONOLUMINESCENCE OF POROUS SILICON
Authors: ZUK J KUDUK R KULIK M LISKIEWICZ J MACZKA D ZHUKOVSKI PV STELMAKH VF BONDARENKO VP DOROFEEV AM
Citation: J. Zuk et al., IONOLUMINESCENCE OF POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 57-60
MECHANISM OF LOW-TEMPERATURE SYNTHESIS OF TUNGSTEN CARBIDE AND WC-CO MIXTURES IN A METHANE HYDROGEN ATMOSPHERE
Authors: PETUKHOV AS UVAROVA IV BONDARENKO VP PAVLOTSKAYA EG MARTYNOVA LM KONCHAKOVSKAYA LD KOSENKO TN
Citation: As. Petukhov et al., MECHANISM OF LOW-TEMPERATURE SYNTHESIS OF TUNGSTEN CARBIDE AND WC-CO MIXTURES IN A METHANE HYDROGEN ATMOSPHERE, Soviet powder metallurgy and metal ceramics, 31(10), 1992, pp. 845-848
FORMATION OF TUNGSTEN CHROMIUM NICKEL HARD ALLOY STRUCTURE
Authors: BONDARENKO VP DELEVI VG DEMYANCHUK AV SIROTA KI TKACHENKO RK TRUNEVICH LV
Citation: Vp. Bondarenko et al., FORMATION OF TUNGSTEN CHROMIUM NICKEL HARD ALLOY STRUCTURE, Soviet powder metallurgy and metal ceramics, 30(4), 1991, pp. 335-338
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