AAAAAA

   
Results: 1-7 |
Results: 7
FIELD-INDUCED ELECTRON-TRANSPORT AND PHONON DYNAMICS IN A GAAS-BASED P-I-N NANOSTRUCTURE - A SUBPICOSECOND TIME-RESOLVED RAMAN PROBE
Authors: GRANN ED TSEN KT FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., FIELD-INDUCED ELECTRON-TRANSPORT AND PHONON DYNAMICS IN A GAAS-BASED P-I-N NANOSTRUCTURE - A SUBPICOSECOND TIME-RESOLVED RAMAN PROBE, Physical review. B, Condensed matter, 56(15), 1997, pp. 9539-9544
QUANTITATIVE ASSESSMENT OF THE EFFECTS OF CARRIER SCREENING ON THE AVERAGE ELECTRIC-FIELD IN A GAAS-BASED P-I-N NANOSTRUCTURE UNDER SUBPICOSECOND LASER EXCITATION
Authors: TSEN KT JOSHI RP SALVADOR A BOTCHAREV A MORKOC H
Citation: Kt. Tsen et al., QUANTITATIVE ASSESSMENT OF THE EFFECTS OF CARRIER SCREENING ON THE AVERAGE ELECTRIC-FIELD IN A GAAS-BASED P-I-N NANOSTRUCTURE UNDER SUBPICOSECOND LASER EXCITATION, Journal of applied physics, 81(1), 1997, pp. 406-408
ELECTRON VELOCITY OVERSHOOT AND NONEQUILIBRIUM PHONONS IN A GAAS-BASED P-I-N NANOSTRUCTURE STUDIED BY TRANSIENT SUBPICOSECOND RAMAN-SPECTROSCOPY
Authors: GRANN ED TSEN KT FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., ELECTRON VELOCITY OVERSHOOT AND NONEQUILIBRIUM PHONONS IN A GAAS-BASED P-I-N NANOSTRUCTURE STUDIED BY TRANSIENT SUBPICOSECOND RAMAN-SPECTROSCOPY, Physical review. B, Condensed matter, 53(15), 1996, pp. 9838-9846
NONEQUILIBRIUM ELECTRON DISTRIBUTIONS AND HIGH-FIELD ELECTRON-TRANSPORT IN AN ALXGA1-XAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTOR - A PICOSECOND RAMAN PROBE
Authors: GRANN ED SHEIH S TSEN KT GUNCER S FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., NONEQUILIBRIUM ELECTRON DISTRIBUTIONS AND HIGH-FIELD ELECTRON-TRANSPORT IN AN ALXGA1-XAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTOR - A PICOSECOND RAMAN PROBE, IEEE journal of selected topics in quantum electronics, 1(4), 1995, pp. 1093-1099
TRANSIENT PICOSECOND RAMAN STUDIES OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS
Authors: GRANN ED SHEIH SJ TSEN KT SANKEY OF GUNCER SE FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., TRANSIENT PICOSECOND RAMAN STUDIES OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS, Physical review. B, Condensed matter, 51(3), 1995, pp. 1631-1641
ELECTRON VELOCITY OVERSHOOT IN A GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTOR OBSERVED BY TRANSIENT SUBPICOSECOND RAMAN-SPECTROSCOPY
Authors: GRANN ED TSEN KT SANKEY OF FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., ELECTRON VELOCITY OVERSHOOT IN A GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTOR OBSERVED BY TRANSIENT SUBPICOSECOND RAMAN-SPECTROSCOPY, Applied physics letters, 67(12), 1995, pp. 1760-1762
PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS
Authors: GRANN ED SHEIH SJ CHIA C TSEN KT SANKEY OF GUNCER SE FERRY DK MARACAS G DROOPAD R SALVADOR A BOTCHAREV A MORKOC H
Citation: Ed. Grann et al., PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS, Applied physics letters, 64(10), 1994, pp. 1230-1232
Risultati: 1-7 |