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Results: 1-3 |
Results: 3
LDD DESIGN TRADEOFFS FOR SINGLE TRANSISTOR LATCH-UP AND HOT-CARRIER DEGRADATION CONTROL IN ACCUMULATION-MODE FD SOI MOSFETS
Authors: DUAN FL SINHA SP IOANNOU DE BRADY FT
Citation: Fl. Duan et al., LDD DESIGN TRADEOFFS FOR SINGLE TRANSISTOR LATCH-UP AND HOT-CARRIER DEGRADATION CONTROL IN ACCUMULATION-MODE FD SOI MOSFETS, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 972-977
TOTAL-DOSE HARDENING OF SIMOX BURIED OXIDES FOR FULLY DEPLETED DEVICES IN RAD-TOLERANT APPLICATIONS
Authors: BRADY FT HUGHES HL MCMARR PJ MRSTIK B
Citation: Ft. Brady et al., TOTAL-DOSE HARDENING OF SIMOX BURIED OXIDES FOR FULLY DEPLETED DEVICES IN RAD-TOLERANT APPLICATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2646-2650
FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS
Authors: BRADY FT SCOTT T BROWN R DAMATO J HADDAD NF
Citation: Ft. Brady et al., FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2304-2309
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