Authors:
RANDALL JN
BROEKAERT TPE
SMITH BD
BEAMLLL EA
SEABAUGH AC
JOVANOVIC D
Citation: Jn. Randall et al., FABRICATION OF LATERAL RESONANT-TUNNELING DEVICES WITH HETEROSTRUCTURE BARRIERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4038-4041
Authors:
BROEKAERT TPE
RANDALL JN
BEAM EA
JOVANOVIC D
SEABAUGH AC
SMITH BD
Citation: Tpe. Broekaert et al., FUNCTIONAL INP INGAAS LATERAL DOUBLE-BARRIER HETEROSTRUCTURE RESONANT-TUNNELING DIODES BY USING ETCH AND REGROWTH/, Applied physics letters, 69(13), 1996, pp. 1918-1920
Authors:
MOISE TS
KAO YC
KATZ AJ
BROEKAERT TPE
CELII FG
Citation: Ts. Moise et al., EXPERIMENTAL SENSITIVITY ANALYSIS OF PSEUDOMORPHIC INGAAS ALAS RESONANT-TUNNELING DIODES/, Journal of applied physics, 78(10), 1995, pp. 6305-6317
Citation: Lh. Peng et al., STRAIN EFFECTS IN THE INTERSUBBAND TRANSITIONS OF NARROW INGAAS QUANTUM-WELLS, Applied physics letters, 62(19), 1993, pp. 2413-2415