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Authors: BACCI T BORCHI E BRUZZI M SANTORO M SCIORTINO S
Citation: T. Bacci et al., FIELDMAP OF MORPHOLOGY OF DIAMOND FILMS GROWN BY USE OF DC PLASMA GLOW-DISCHARGE CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 53(3), 1998, pp. 284-299

Authors: BACCI T BORCHI E BRUZZI M MEIER D SANTORO M SCIORTINO S
Citation: T. Bacci et al., SYNTHESIS OF LOW LEAKAGE CURRENT CHEMICAL-VAPOR-DEPOSITED (CVD) DIAMOND FILMS FOR PARTICLE-DETECTION, Nuclear physics. B, 1998, pp. 303-310

Authors: LAZANU S LAZANU I BIGGERI U BORCHI E BRUZZI M
Citation: S. Lazanu et al., NONIONIZING ENERGY DEPOSITION OF PIONS IN GAAS AND SI FOR RADIATION-DAMAGE STUDIES, Nuclear physics. B, 1998, pp. 409-414

Authors: BIGGERI U BORCHI E BRUZZI M LI Z VERBITSKAYA E
Citation: U. Biggeri et al., RADIATION-DAMAGE ON SILICON AFTER VERY HIGH NEUTRON FLUENCE IRRADIATION, Nuclear physics. B, 1998, pp. 475-480

Authors: BORCHI E BRUZZI M LEROY C PIROLLO S SCIORTINO S
Citation: E. Borchi et al., ELECTRICAL CHARACTERISTICS AND CHARGE COLLECTION EFFICIENCY OF SILICON DETECTORS IRRADIATED WITH VERY HIGH NEUTRON AND PROTON FLUENCES, Nuclear physics. B, 1998, pp. 481-486

Authors: KRAMMER M ADAM W BAUER C BERDERMANN E BOGANI F BORCHI E BRUZZI M COLLEDANI C CONWAY J DABROWSKI W DELPIERRE P DENEUVILLE A DULINSKI W VANEIJK B FALLOU A FISH D FOULON F FRIEDL M GAN KK GHEERAERT E GRIGORIEV E HALLEWELL G HALLWILTON R HAN S HARTJES F HRUBEC J HUSSON D KAGAN H KANIA D KAPLON J KASS R KNOPFLE KT MANFREDI PF MEIER D MISHINA M LENORMAND F PAN LS PERNEGGER H PERNICKA M RE V RIESTER GL ROE S ROFF D RUDGE A SCHNETZER S SCIORTINO S SPEZIALI V STELZER H STONE R TAPPER RJ TESAREK R THOMSON GB TRAWICK M TRISCHUK W TURCHETTA R WALSH AM WEDENIG R WEILHAMMER P ZIOCK H ZOELLER M
Citation: M. Krammer et al., STATUS OF DIAMOND PARTICLE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 418(1), 1998, pp. 196-202

Authors: BILEI GM ALBERGO S ANGARANO M AZZI P BACCHETTA N BAGLIESI G BARTALINI P BASTI A BIGGERI U BISELLO D BOEMI D CAZZOLA U BORRELLO L BOZZI C BREUKER H BRUZZI M CANDELORI A CANER A CASTALDI R CATACCHINI E CHECCUCCI B CIAMPOLINI P CIASNOHOVA A CIVININI C CONNOTTE J CREANZA D DALESSANDRO R DAROLD M DEPALMA M DELLORSO R DELLAMARINA R EKLUND C ELLIOTTPEISERT A FIORE L FOCARDI E FRENCH M GIASSI A GIRALDO A GLESSING B GU WH HALL G HAMMERSTROM R HRUBEC J HUHTINEN M KARIMAKI V KRAMMER M LARICCIA P LORETI M LUEBELSMEYER K LUSTERMANN W MAGGI G MANNELLI M MANTOVANI G MARCHIORO A MARTIGNON G MCEVOY B MESCHINI M MESSINEO A MY S PACCAGNELLA A PANDOULAS D PARRINI G PASSERI D PIERI M POTENZA R RAFFAELLI F RASO G RAYMOND M SANTOCCHIA A SCHMITT B SELVAGGI G SERVOLI L SIEDLING R SILVESTRIS L SKASSYRSKAIA A SKOG K STARODUMOV A STAVITSKY I STEFANINI G TEMPESTA P TONELLI G TRICOMI A TUUVA T VANNINI C VERDINI PG VIERTEL G XIE Z WATTS S WITTMER B
Citation: Gm. Bilei et al., THE CMS SILICON TRACKER AT LHC, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 105-111

Authors: BRUZZI M CATACCHINI E DALESSANDRO R PARRINI G
Citation: M. Bruzzi et al., HEAVILY IRRADIATED DOUBLE-SIDED WEDGE SILICON MICROSTRIP DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 132-134

Authors: BIGGERI U BORCHI E BRUZZI M LI Z VERBITSKAYA E
Citation: U. Biggeri et al., STUDY OF ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY AND MEDIUM-RESISTIVITY SILICON DETECTORS IRRADIATED WITH VERY HIGH NEUTRON FLUENCE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 176-179

Authors: BORCHI E BRUZZI M MEIER D PIROLLO S SANTORO M SCIORTINO S
Citation: E. Borchi et al., CHARACTERIZATION OF DIAMOND DETECTORS PREPARED BY DC PLASMA GLOW-DISCHARGE CVD, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 240-242

Authors: WEILHAMMER P ADAM W BAUER C BERDERMANN E BOGANI F BORCHI E BRUZZI M COLLEDANI C CONWAY J DABROWSKI W DELPIERRE P DENEUVILLE A DULINSKI W VANDEREIJK R VANEIJK B FALLOU A FISH D FRIED M GAN KK GHEERAERT E GRIGORIEV E HALLEWELL G HALLWILTON R HAN S HARTJES F HRUBEC J HUSSON D KAGAN H KANIA D KAPLON J KASS R KNOPFLE KT KRAMMER M MANFREDI PF MEIER D",LENORMAND,"PAN LS PERNEGGER H PERNICKA M PLANO R RE V RIESTER JL ROE S",ROFF,"RUDGE A SCHIEBER M SCHNETZER S SCIORTINO S SPEZIALI V STELZER H STONE R TAPPER RJ TESAREK R THOMSON GB TRAWICK M TRISCHUK W TURCHETTA R
Citation: P. Weilhammer et al., RECENT RESULTS ON CVD DIAMOND RADIATION SENSORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 264-270

Authors: LAZANU I LAZANU S BORCHI E BRUZZI M
Citation: I. Lazanu et al., THEORETICAL CALCULATION OF DIAMOND DAMAGE BY PI(+) PI(-) MESONS IN THE DELTA(33) RESONANCE ENERGY-RANGE/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 406(2), 1998, pp. 259-266

Authors: BORCHI E BRUZZI M PIROLLO S SCIORTINO S
Citation: E. Borchi et al., HIGH-TEMPERATURE THERMALLY STIMULATED CURRENTS ANALYSIS OF CVD DIAMOND FILMS, Solid-state electronics, 42(4), 1998, pp. 674-676

Authors: BORCHI E BRUZZI M PIROLLO S SCIORTINO S
Citation: E. Borchi et al., CURRENT-TEMPERATURE ANALYSIS OF DC GLOW-DISCHARGE CVD DIAMOND FILMS, Solid-state electronics, 42(3), 1998, pp. 429-436

Authors: BORCHI E BRUZZI M PIROLLO S SCIORTINO S
Citation: E. Borchi et al., TEMPERATURE AND FREQUENCY-DEPENDENCE OF THE CAPACITANCE OF HEAVILY IRRADIATED SILICON DIODES, Solid-state electronics, 42(11), 1998, pp. 2093-2096

Authors: BORCHI E BRUZZI M LEROY C SCIORTINO S
Citation: E. Borchi et al., THERMOLUMINESCENCE ANALYSIS OF BETA-IRRADIATED AND GAMMA-IRRADIATED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS, Journal of physics. D, Applied physics, 31(6), 1998, pp. 609-616

Authors: BACCI T BORCHI E BRUZZI M SANTORO M SCIORTINO S
Citation: T. Bacci et al., STRUCTURAL CHARACTERIZATION AND TRANSPORT-PROPERTIES OF DIAMOND FILMSPREPARED BY DC PLASMA GLOW-DISCHARGE CVD, Inorganic materials, 34(4), 1998, pp. 321-331

Authors: BIGGERI U BORCHI E BRUZZI M EREMIN V LEROY C LI Z MENICHELLI D PIROLLO S SCIORTINO S VERBITSKAYA E
Citation: U. Biggeri et al., A COMPARATIVE-STUDY OF HEAVILY IRRADIATED SILICON AND NON IRRADIATED SI LEC GAAS DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 597-601

Authors: BORCHI E BRUZZI M CATACCHINI E DALESSANDRO R PARRINI G
Citation: E. Borchi et al., RADIATION-DAMAGE ANALYSIS OF NEUTRON-IRRADIATED DOUBLE-SIDED WEDGE MICROSTRIP SILICON DETECTOR, IEEE transactions on nuclear science, 45(3), 1998, pp. 632-635

Authors: BORCHI E BRUZZI M LEROY C PIROLLO S SCIORTINO S
Citation: E. Borchi et al., CHARGE COLLECTION AND NOISE-ANALYSIS OF HEAVILY IRRADIATED SILICON DETECTORS, IEEE transactions on nuclear science, 45(2), 1998, pp. 141-145

Authors: BACCI T BORCHI E BRUZZI M SANTORO M SCIORTINO S
Citation: T. Bacci et al., CHANGE IN SURFACE-MORPHOLOGY OF DIAMOND FILMS DEPOSITED BY DC PLASMA GLOW-DISCHARGE CVD, Materials science & engineering. B, Solid-state materials for advanced technology, 48(3), 1997, pp. 268-278

Authors: BACCI T BORCHI E BRUZZI M SANTORO M SCIORTINO S
Citation: T. Bacci et al., CORRELATION BETWEEN MATERIAL PROPERTIES AND LEAKAGE CURRENTS IN CVD-DIAMOND-FILMS DEPOSITED BY DC-PLASMA-GLOW-DISCHARGE, Materials science & engineering. B, Solid-state materials for advanced technology, 47(1), 1997, pp. 54-63

Authors: BIGGERI U BORCHI E BRUZZI M PIROLLO S SCIORTINO S LAZANU S LI Z
Citation: U. Biggeri et al., HALL-EFFECT MEASUREMENTS ON PROTON-IRRADIATED ROSE SAMPLES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 400(1), 1997, pp. 113-123

Authors: LAZANU S LAZANU I BIGGERI U BORCHI E BRUZZI M
Citation: S. Lazanu et al., MODEL PREDICTIONS FOR THE NIEL OF HIGH-ENERGY PIONS IN SI AND GAAS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 394(1-2), 1997, pp. 232-234

Authors: BIGGERI U BORCHI E BRUZZI M LAZANU S LI Z
Citation: U. Biggeri et al., CV-EFFECT AND HALL-EFFECT ANALYSIS ON NEUTRON-IRRADIATED SILICON DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 330-334
Risultati: 1-25 | 26-41