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Results: 1-9 |
Results: 9
INTERNAL STRAIN AND DISLOCATIONS IN INXGA1-XAS CRYSTALS GROWN BY LIQUID-PHASE EPITAXY ELECTROEPITAXY
Authors: BRYSKIEWICZ B BRYSKIEWICZ T JIRAN E
Citation: B. Bryskiewicz et al., INTERNAL STRAIN AND DISLOCATIONS IN INXGA1-XAS CRYSTALS GROWN BY LIQUID-PHASE EPITAXY ELECTROEPITAXY, Journal of electronic materials, 24(3), 1995, pp. 203-209
ORIGIN OF CARBON AND ITS INFLUENCE ON PHOTOLUMINESCENCE IN POROUS SILICON
Authors: SIEGELE R HAUGEN HK LOCKWOOD DJ BRYSKIEWICZ B FORSTER JS ANDREWS HR
Citation: R. Siegele et al., ORIGIN OF CARBON AND ITS INFLUENCE ON PHOTOLUMINESCENCE IN POROUS SILICON, Solid state communications, 93(10), 1995, pp. 833-836
OPTICAL-ABSORPTION EVIDENCE FOR QUANTUM CONFINEMENT EFFECTS IN POROUSSILICON
Authors: LOCKWOOD DJ WANG A BRYSKIEWICZ B
Citation: Dj. Lockwood et al., OPTICAL-ABSORPTION EVIDENCE FOR QUANTUM CONFINEMENT EFFECTS IN POROUSSILICON, Solid state communications, 89(7), 1994, pp. 587-589
TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF INXGA1-XAS SUBSTRATES GROWN BY HETEROEPITAXIAL LATERAL OVERGROWTH
Authors: MCCAFFREY JP BRYSKIEWICZ B BRYSKIEWICZ T JIRAN E
Citation: Jp. Mccaffrey et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF INXGA1-XAS SUBSTRATES GROWN BY HETEROEPITAXIAL LATERAL OVERGROWTH, Applied physics letters, 64(18), 1994, pp. 2344-2346
OPTICAL LUMINESCENCE YIELD X-RAY-ABSORPTION FINE-STRUCTURES AT THE SULFUR AND SILICON K-EDGE
Authors: SHAM TK FENG XH JIANG DT TAN KH FRIGO SP ROSENBERG RA HOUGHTON DC BRYSKIEWICZ B
Citation: Tk. Sham et al., OPTICAL LUMINESCENCE YIELD X-RAY-ABSORPTION FINE-STRUCTURES AT THE SULFUR AND SILICON K-EDGE, JPN J A P 1, 32, 1993, pp. 223-225
ULTRAVIOLET-OZONE OXIDATION OF GAAS(100) AND INP(100)
Authors: LU ZH BRYSKIEWICZ B MCCAFFREY J WASILEWSKI Z GRAHAM MJ
Citation: Zh. Lu et al., ULTRAVIOLET-OZONE OXIDATION OF GAAS(100) AND INP(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2033-2037
ORIGIN OF LUMINESCENCE FROM POROUS SILICON DEDUCED BY SYNCHROTRON-LIGHT-INDUCED OPTICAL LUMINESCENCE
Authors: SHAM TK JIANG DT COULTHARD I LORIMER JW FENG XH TAN KH FRIGO SP ROSENBERG RA HOUGHTON DC BRYSKIEWICZ B
Citation: Tk. Sham et al., ORIGIN OF LUMINESCENCE FROM POROUS SILICON DEDUCED BY SYNCHROTRON-LIGHT-INDUCED OPTICAL LUMINESCENCE, Nature, 363(6427), 1993, pp. 331-334
SI K-EDGE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF POROUS SILICON
Authors: SHAM TK FENG XH JIANG DT YANG BX XIONG JZ BZOWSKI A HOUGHTON DC BRYSKIEWICZ B WANG E
Citation: Tk. Sham et al., SI K-EDGE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF POROUS SILICON, Canadian journal of physics, 70(10-11), 1992, pp. 813-818
OPTICAL-PROPERTIES OF POROUS SILICON
Authors: LOCKWOOD DJ AERS GC ALLARD LB BRYSKIEWICZ B CHARBONNEAU S HOUGHTON DC MCCAFFREY JP WANG A
Citation: Dj. Lockwood et al., OPTICAL-PROPERTIES OF POROUS SILICON, Canadian journal of physics, 70(10-11), 1992, pp. 1184-1193
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