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Results: 1-10 |
Results: 10
QUANTUM-WELL MODEL AND THE OPTICAL-ABSORPTION EDGE IN STRUCTURALLY NONUNIFORM A-SI-H-BASED ALLOYS
Authors: BUDAGYAN BG AIVAZOV AA STRYAKHILEV DA SOKOLOV EM
Citation: Bg. Budagyan et al., QUANTUM-WELL MODEL AND THE OPTICAL-ABSORPTION EDGE IN STRUCTURALLY NONUNIFORM A-SI-H-BASED ALLOYS, Semiconductors, 32(5), 1998, pp. 473-478
OPTICAL-PROPERTIES, DENSITY-OF-STATES, AND ATOMIC LATTICE DEFORMATIONS IN SILICON-ENRICHED A-SINX-H ALLOYS
Authors: BUDAGYAN BG AIVAZOV AA STRYAKHILEV DA
Citation: Bg. Budagyan et al., OPTICAL-PROPERTIES, DENSITY-OF-STATES, AND ATOMIC LATTICE DEFORMATIONS IN SILICON-ENRICHED A-SINX-H ALLOYS, Semiconductors, 30(9), 1996, pp. 839-844
SELECTIVE PHOTOSENSITIVITY OF A-SI C-SI HETEROSTRUCTURES IN THE NEAR IR/
Authors: BUDAGYAN BG SHERCHENKOV AA AIVAZOV AA
Citation: Bg. Budagyan et al., SELECTIVE PHOTOSENSITIVITY OF A-SI C-SI HETEROSTRUCTURES IN THE NEAR IR/, Semiconductors, 30(12), 1996, pp. 1154-1157
SPECTRAL CHARACTERISTICS OF PHOTOSENSITIVE ALPHA-SI DEVICES
Authors: BUDAGYAN BG AIVAZOV AA SHERCHENKOV AA FILATOVA IV
Citation: Bg. Budagyan et al., SPECTRAL CHARACTERISTICS OF PHOTOSENSITIVE ALPHA-SI DEVICES, Measurement techniques, 38(11), 1995, pp. 1228-1232
ANALYSIS OF IR-SPECTRA OF A-SINRH ALLOYS ON THE BASIS OF THE INDUCTION MODEL
Authors: BUDAGYAN BG ALVAZOV AA STRYAKHILEV DA KUDOYAROVA VK
Citation: Bg. Budagyan et al., ANALYSIS OF IR-SPECTRA OF A-SINRH ALLOYS ON THE BASIS OF THE INDUCTION MODEL, Semiconductors, 28(5), 1994, pp. 459-466
OSCILLATIONS OF THE PHOTOCONDUCTIVITY AND CHARACTERISTIC FEATURES OF THE RELAXATION KINETICS OF A-SI-H
Authors: BUDAGYAN BG AIVAZOV AA STANOVOV ON
Citation: Bg. Budagyan et al., OSCILLATIONS OF THE PHOTOCONDUCTIVITY AND CHARACTERISTIC FEATURES OF THE RELAXATION KINETICS OF A-SI-H, Semiconductors, 27(9), 1993, pp. 822-825
EFFECT OF THE CONCENTRATION OF NITROGEN ON THE MICROSTRUCTURE AND DARK CONDUCTIVITY OF A-SI1-XNX-H FILMS
Authors: BUDAGYAN BG AIVAZOV AA SAZONOV AY
Citation: Bg. Budagyan et al., EFFECT OF THE CONCENTRATION OF NITROGEN ON THE MICROSTRUCTURE AND DARK CONDUCTIVITY OF A-SI1-XNX-H FILMS, Semiconductors, 27(8), 1993, pp. 754-756
MICROSTRUCTURAL INHOMOGENEITY AND STAEBLER-WRONSKI EFFECT IN A-SI1-XNX-H AT HIGH-TEMPERATURES
Authors: AIVAZOV AA BUDAGYAN BG STANOVOV ON
Citation: Aa. Aivazov et al., MICROSTRUCTURAL INHOMOGENEITY AND STAEBLER-WRONSKI EFFECT IN A-SI1-XNX-H AT HIGH-TEMPERATURES, Inorganic materials, 29(11), 1993, pp. 1330-1333
ELECTROPHYSICAL PROPERTIES OF A-SIH AND ITS METASTABLE STATES
Authors: AIVAZOV AA BUDAGYAN BG
Citation: Aa. Aivazov et Bg. Budagyan, ELECTROPHYSICAL PROPERTIES OF A-SIH AND ITS METASTABLE STATES, Inorganic materials, 28(10-11), 1992, pp. 1651-1653
GROWTH, STRUCTURE, AND PROPERTIES OF A-SI1-XNXH FILMS
Authors: AIVAZOV AA BUDAGYAN BG SAZONOV AY STRYAKHILEV DA
Citation: Aa. Aivazov et al., GROWTH, STRUCTURE, AND PROPERTIES OF A-SI1-XNXH FILMS, Inorganic materials, 28(10-11), 1992, pp. 1710-1716
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