Authors: Sukhoveyev, VA Ivantsov, VA Nikitina, IP Babanin, AI Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Dmitriev, VA

Citation: Va. Sukhoveyev et al., GaN 20-mm diameter ingots grown from melt-solution by seeded technique, MRS I J N S, 5, 2000, pp. NIL_376-NIL_381

Authors: Vasilevskii, KV Rendakova, SV Nikitina, IP Babanin, AI Andreev, AN Zekentes, K

Citation: Kv. Vasilevskii et al., Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers, SEMICONDUCT, 33(11), 1999, pp. 1206-1211

Authors: Kalinina, EV Kholuyanov, GF Shchukarev, AV Savkina, NS Babanin, AI Yagovkina, MA Kuznetsov, NI

Citation: Ev. Kalinina et al., Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes, DIAM RELAT, 8(6), 1999, pp. 1114-1117