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Results: 1-8 |
Results: 8
Multiscale simulation of nanosystems
Authors: Nakano, A Bachlechner, ME Kalia, RK Lidorikis, E Vashishta, P Voyiadjis, GZ Campbell, TJ Ogata, S Shimojo, F
Citation: A. Nakano et al., Multiscale simulation of nanosystems, COMPUT SC E, 3(4), 2001, pp. 56-66
Coupling length scales for multiscale atomistics-continuum simulations: Atomistically induced stress distributions in Si/Si3N4 nanopixels - art. no. 086104
Authors: Lidorikis, E Bachlechner, ME Kalia, RK Nakano, A Vashishta, P Voyiadjis, GZ
Citation: E. Lidorikis et al., Coupling length scales for multiscale atomistics-continuum simulations: Atomistically induced stress distributions in Si/Si3N4 nanopixels - art. no. 086104, PHYS REV L, 8708(8), 2001, pp. 6104
Multimillion atom simulations of nanostructured materials on parallel computers - Sintering and consolidation, fracture, and oxidation
Authors: Vashishta, P Bachlechner, ME Campbell, T Kalia, RK Kikuchi, H Kodiyalam, S Nakano, A Ogata, S Shimojo, F Walsh, P
Citation: P. Vashishta et al., Multimillion atom simulations of nanostructured materials on parallel computers - Sintering and consolidation, fracture, and oxidation, PROG T PH S, (138), 2000, pp. 175-190
Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers
Authors: Omeltchenko, A Bachlechner, ME Nakano, A Kalia, RK Vashishta, P Ebbsjo, I Madhukar, A Messina, P
Citation: A. Omeltchenko et al., Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers, PHYS REV L, 84(2), 2000, pp. 318-321
Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers
Authors: Bachlechner, ME Omeltchenko, A Nakano, A Kalia, RK Vashishta, P Ebbsjo, I Madhukar, A
Citation: Me. Bachlechner et al., Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers, PHYS REV L, 84(2), 2000, pp. 322-325
Large-scale atomistic modeling of nanoelectronic structures
Authors: Nakano, A Bachlechner, ME Branicio, P Campbell, TJ Ebbsjo, I Kalia, RK Madhukar, A Ogata, S Omeltchenko, A Rino, JP Shimojo, F Walsh, P Vashishta, P
Citation: A. Nakano et al., Large-scale atomistic modeling of nanoelectronic structures, IEEE DEVICE, 47(10), 2000, pp. 1804-1810
Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers
Authors: Bachlechner, ME Kalia, RK Nakano, A Omeltchenko, A Vashishta, P Ebbsjo, I Madhukar, A Zhao, GL
Citation: Me. Bachlechner et al., Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers, J EUR CERAM, 19(13-14), 1999, pp. 2265-2272
Atomistic simulation of nanostructured materials
Authors: Nakano, A Bachlechner, ME Campbell, TJ Kalla, RK Omeltchenko, A Tsuruta, K Vashishta, P Ogata, S Ebbsjo, I Madhukar, A
Citation: A. Nakano et al., Atomistic simulation of nanostructured materials, IEEE COM SC, 5(4), 1998, pp. 68-78
Risultati: 1-8 |