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Results:
1-14
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Results: 14
Authors:
Burbee, DG
Forgacs, E
Zochbauer-Muller, S
Shivakumar, L
Fong, K
Gao, BN
Randle, D
Kondo, M
Virmani, A
Bader, S
Sekido, Y
Latif, F
Milchgrub, S
Toyooka, S
Gazdar, AF
Lerman, MI
Zabarovsky, E
White, M
Minna, JD
Citation: Dg. Burbee et al., Epigenetic inactivation of RASSF14 in lung and breast cancers and malignant phenotype suppression, J NAT CANC, 93(9), 2001, pp. 691-699
Authors:
Legge, M
Bacher, G
Bader, S
Kummell, T
Forchel, A
Nurnberger, J
Schumacher, C
Faschinger, W
Landwehr, G
Citation: M. Legge et al., Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors, J VAC SCI B, 19(3), 2001, pp. 692-694
Authors:
Weimar, A
Lell, A
Bruderl, G
Bader, S
Harle, V
Citation: A. Weimar et al., Investigation of low-resistance metal contacts on p-type GaN using the linear and circular transmission line method, PHYS ST S-A, 183(1), 2001, pp. 169-175
Authors:
Baur, J
Strauss, U
Bruederl, G
Eisert, D
Oberschmid, R
Hahn, B
Lugauer, HJ
Bader, S
Zehnder, U
Fehrer, M
Harle, V
Citation: J. Baur et al., Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC, J CRYST GR, 230(3-4), 2001, pp. 507-511
Authors:
Schwegler, V
Schad, SS
Scherer, M
Kamp, M
Ulu, G
Emsley, M
Unlu, MS
Lell, A
Bader, S
Hahne, B
Lugauer, HJ
Kuhn, F
Weimar, A
Harle, V
Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516
Authors:
Hangleiter, A
Heppel, S
Off, J
Kuhn, B
Scholz, F
Bader, S
Hahn, B
Harle, V
Citation: A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526
Authors:
Vehse, M
Michler, R
Lange, O
Rowe, M
Gutowski, J
Bader, S
Lugauer, HJ
Bruderl, G
Weimar, A
Lell, A
Harle, V
Citation: M. Vehse et al., Optical gain and saturation in nitride-based laser structures, APPL PHYS L, 79(12), 2001, pp. 1763-1765
Authors:
Legge, M
Bacher, G
Bader, S
Forchel, A
Lugauer, HJ
Waag, A
Landwehr, G
Citation: M. Legge et al., Strongly index-guided II-VI laser diodes, IEEE PHOTON, 12(3), 2000, pp. 236-238
Authors:
Harle, V
Hahn, B
Lugauer, HJ
Bader, S
Bruderl, G
Baur, J
Eisert, D
Strauss, U
Zehnder, U
Lell, A
Hiller, N
Citation: V. Harle et al., GaN-based LEDs and lasers on SiC, PHYS ST S-A, 180(1), 2000, pp. 5-13
Authors:
Bader, S
Hahn, B
Lugauer, HJ
Lell, A
Weimar, A
Bruderl, G
Baur, J
Eisert, D
Scheubeck, M
Heppel, S
Hangleiter, A
Harle, V
Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182
Authors:
Michler, P
Lange, O
Vehse, M
Gutowski, J
Bader, S
Hahn, B
Lugauer, HJ
Harle, V
Citation: P. Michler et al., Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures, PHYS ST S-A, 180(1), 2000, pp. 391-396
Authors:
Bader, S
Walker, M
Harrison, D
Citation: S. Bader et al., Most microsatellite unstable sporadic colorectal carcinomas carry MBD4 mutations, BR J CANC, 83(12), 2000, pp. 1646-1649
Authors:
Bader, S
Walker, M
Heindrich, B
Bird, A
Bird, C
Hooper, M
Wyllie, A
Citation: S. Bader et al., Somatic frameshift mutations in the MBD4 gene of sporadic colon cancers with mismatch repair deficiency, ONCOGENE, 18(56), 1999, pp. 8044-8047
Authors:
Muckter, H
Zwing, M
Bader, S
Marx, T
Doklea, E
Liebl, B
Fichtl, B
Georgieff, M
Citation: H. Muckter et al., A novel apparatus for the exposure of cultured cells to volatile agents, J PHARM TOX, 40(2), 1998, pp. 63-69
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1-14
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