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Results:
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Results: 8
Authors:
Croci, S
Plossu, C
Balland, B
Dubois, C
Boivin, P
Citation: S. Croci et al., Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate, J MAT S-M E, 12(4-6), 2001, pp. 333-338
Authors:
Croci, S
Plossu, C
Balland, B
Raynaud, C
Boivin, P
Citation: S. Croci et al., Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories, J NON-CRYST, 280(1-3), 2001, pp. 202-210
Authors:
Reti, F
Sassi, Z
Kaabi, L
Bureau, JC
Vincent, H
Balland, B
Citation: F. Reti et al., Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system, SURF INT AN, 30(1), 2000, pp. 387-390
Authors:
Masson, P
Morfouli, P
Autran, JL
Brini, J
Balland, B
Vogel, EM
Wortman, JJ
Citation: P. Masson et al., Electrical properties of oxynitride thin films using noise and charge pumping measurements, J NON-CRYST, 245, 1999, pp. 54-58
Authors:
Chaneliere, C
Autran, JL
Four, S
Devine, RAB
Balland, B
Citation: C. Chaneliere et al., Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures, J NON-CRYST, 245, 1999, pp. 73-78
Authors:
Plossu, C
Voisin, JM
Bos, B
Raynaud, C
Bouchakour, R
Boivin, P
Balland, B
Citation: C. Plossu et al., Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function, J NON-CRYST, 245, 1999, pp. 85-91
Authors:
Balland, B
Glachant, A
Citation: B. Balland et A. Glachant, Silica, silicon nitride and oxynitride thin films - An overview of fabrication techniques, properties and applications, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 3-144
Authors:
Autran, JL
Balland, B
Barbottin, G
Citation: Jl. Autran et al., Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 405-493
Risultati:
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