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Results:
1-4
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Results: 4
Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN
Authors:
Han, J Figiel, JJ Petersen, GA Myers, SM Crawford, MH Banas, MA
Citation:
J. Han et al., Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN, JPN J A P 1, 39(4B), 2000, pp. 2372-2375
MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics
Authors:
Han, J Figiel, JJ Petersen, GA Myers, SM Crawford, MH Banas, MA Hearne, SJ
Citation:
J. Han et al., MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics, MRS I J N S, 5, 2000, pp. NIL_353-NIL_364
Optical spectroscopy of InGaN epilayers in the low indium composition regime
Authors:
Crawford, MH Han, J Banas, MA Myers, SM Petersen, GA Figiel, JJ
Citation:
Mh. Crawford et al., Optical spectroscopy of InGaN epilayers in the low indium composition regime, MRS I J N S, 5, 2000, pp. NIL_616-NIL_621
OMVPE growth and gas-phase reactions of AlGaN for UV emitters
Authors:
Han, J Figiel, JJ Crawford, MH Banas, MA Bartram, ME Biefeld, RM Song, YK Nurmikko, AV
Citation:
J. Han et al., OMVPE growth and gas-phase reactions of AlGaN for UV emitters, J CRYST GR, 195(1-4), 1998, pp. 291-296
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