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Results: 1-12 |
Results: 12
The localized corrosion of Al at engineered Cu islands
Authors: Missert, N Barbour, JC Copeland, RG Mikkalson, JE
Citation: N. Missert et al., The localized corrosion of Al at engineered Cu islands, JOM-J MIN, 53(7), 2001, pp. 34-36
MRS featured volunteer
Authors: Barbour, JC
Citation: Jc. Barbour, MRS featured volunteer, MRS BULL, 26(10), 2001, pp. 803-803
Determination of solid-state sulfidation mechanisms in ion-implanted copper
Authors: Barbour, JC Braithwaite, JW Wright, AF
Citation: Jc. Barbour et al., Determination of solid-state sulfidation mechanisms in ion-implanted copper, NUCL INST B, 175, 2001, pp. 382-387
Lattice location of hydrogen in Mg doped GaN
Authors: Wampler, WR Myers, SM Wright, AF Barbour, JC Seager, CH Han, J
Citation: Wr. Wampler et al., Lattice location of hydrogen in Mg doped GaN, J APPL PHYS, 90(1), 2001, pp. 108-117
Growth and oxidation of thin film Al2Cu
Authors: Son, KA Missert, N Barbour, JC Hren, JJ Copeland, RG Minor, KG
Citation: Ka. Son et al., Growth and oxidation of thin film Al2Cu, J ELCHEM SO, 148(7), 2001, pp. B260-B263
Nanostructural characterization of amorphous diamondlike carbon films
Authors: Siegal, MP Tallant, DR Martinez-Miranda, LJ Barbour, JC Simpson, RL Overmyer, DL
Citation: Mp. Siegal et al., Nanostructural characterization of amorphous diamondlike carbon films, PHYS REV B, 61(15), 2000, pp. 10451-10462
Lattice location of deuterium in plasma and gas charged Mg doped GaN
Authors: Wampler, WR Barbour, JC Seager, CH Myers, SM Wright, AF Han, J
Citation: Wr. Wampler et al., Lattice location of deuterium in plasma and gas charged Mg doped GaN, MRS I J N S, 5, 2000, pp. NIL_475-NIL_480
The mechanical properties of alumina films formed by plasma deposition andby ion irradiation of sapphire
Authors: Barbour, JC Knapp, JA Follstaedt, DM Mayer, TM Minor, KG Linam, DL
Citation: Jc. Barbour et al., The mechanical properties of alumina films formed by plasma deposition andby ion irradiation of sapphire, NUCL INST B, 166, 2000, pp. 140-147
Formation of cavities in GaAs and InGaAs
Authors: Follstaedt, DM Myers, SM Barbour, JC Petersen, GA Reno, JL Dawson, LR Lee, SR
Citation: Dm. Follstaedt et al., Formation of cavities in GaAs and InGaAs, NUCL INST B, 160(4), 2000, pp. 476-498
Protection from strikes
Authors: Barbour, JC
Citation: Jc. Barbour, Protection from strikes, IEE REVIEW, 45(2), 1999, pp. 78-78
Effects of hydrogen in the annealing environment on photoluminescence fromSi nanoparticles in SiO2
Authors: Withrow, SP White, CW Meldrum, A Budai, JD Hembree, DM Barbour, JC
Citation: Sp. Withrow et al., Effects of hydrogen in the annealing environment on photoluminescence fromSi nanoparticles in SiO2, J APPL PHYS, 86(1), 1999, pp. 396-401
Finite-element modeling of nanoindentation
Authors: Knapp, JA Follstaedt, DM Myers, SM Barbour, JC Friedmann, TA
Citation: Ja. Knapp et al., Finite-element modeling of nanoindentation, J APPL PHYS, 85(3), 1999, pp. 1460-1474
Risultati: 1-12 |