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Citation: M. Bidaud et al., 1.5-2.5 nm RTP gate oxides: process feasibility, properties and limitations, J NON-CRYST, 280(1-3), 2001, pp. 32-38

Authors: Jacques, D Regolini, JL Barla, K

Citation: D. Jacques et al., Interface studies of silicon nitride dielectric layers, J NON-CRYST, 280(1-3), 2001, pp. 59-62

Authors: Maddalon, C Barla, K Denis, E Lous, E Perrin, E Lis, S Lair, C Dehan, E

Citation: C. Maddalon et al., Planarization properties of hydrogen silsesquioxane (HSQ) influence on CMP, MICROEL ENG, 50(1-4), 2000, pp. 33-40

Authors: Jahan, C Bruyere, S Ghibaudo, G Vincent, E Barla, K

Citation: C. Jahan et al., Model for the oxide thickness dependence of SILC generation based on anodehole injection process, MICROEL REL, 39(6-7), 1999, pp. 791-795

Authors: Jahan, C Barla, K

Citation: C. Jahan et K. Barla, Effect of boron penetration on the stress induced leakage current in PMOS structures with p+ doped polysilicon gate, J NON-CRYST, 245, 1999, pp. 33-40