Authors: Bulyarskii, SV Ambrozevich, AS Moliver, SS Dzhabrailov, TA Bayazitov, RM Batalov, RI

Citation: Sv. Bulyarskii et al., Investigation of silicon implanted with carbon ions, TECH PHYS L, 27(3), 2001, pp. 254-255

Authors: Bayazitov, RM Batalov, RI Terukov, EI Kudoyarova, VK

Citation: Rm. Bayazitov et al., X-ray and luminescence analysis of finely dispersed beta-FeSi2 films formed on Si by pulsed ion treatment, PHYS SOL ST, 43(9), 2001, pp. 1633-1636

Authors: Batalov, RI Bayazitov, RM Terukov, EI Kudoyarova, VK Weiser, G Kuehne, H

Citation: Ri. Batalov et al., A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions, SEMICONDUCT, 35(11), 2001, pp. 1263-1269

Authors: Bayazitov, RM Batalov, RI

Citation: Rm. Bayazitov et Ri. Batalov, X-ray and optical characterization of beta-FeSi2 layers formed by pulsed ion-beam treatment, J PHYS-COND, 13(5), 2001, pp. L113-L118

Authors: Bayazitov, RM Galyautdinov, MF Batalov, RI Khaibullin, IB Groetzchel, R

Citation: Rm. Bayazitov et al., Laser annealing of implanted silicon with temperature-controlled transparency, NUCL INST B, 148(1-4), 1999, pp. 317-321