AAAAAA

   
Results: 1-10 |
Results: 10
High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process
Authors: Temircl, C Bati, B Saglam, M Turut, A
Citation: C. Temircl et al., High-barrier height Sn/p-Si Schottky diodes with interfacial layer by anodization process, APPL SURF S, 172(1-2), 2001, pp. 1-7
Synthesis, characterization, and spectral and thermal studies of some divalent transition metal complexes of benzylpiperazine dithiocarbamate
Authors: Cesur, H Yazicilar, TK Bati, B Yilmaz, VT
Citation: H. Cesur et al., Synthesis, characterization, and spectral and thermal studies of some divalent transition metal complexes of benzylpiperazine dithiocarbamate, SYN REAC IN, 31(7), 2001, pp. 1271-1283
The synthesis and characterization of new unsymmetrical vic-dioximes and their complexes with some transition metals
Authors: Bati, H Tas, M Bati, B
Citation: H. Bati et al., The synthesis and characterization of new unsymmetrical vic-dioximes and their complexes with some transition metals, SYN REAC IN, 31(4), 2001, pp. 541-548
The effect of series resistance on calculation of the interface state density distribution in Schottky diodes
Authors: Ayyildiz, E Temirci, C Bati, B Turut, A
Citation: E. Ayyildiz et al., The effect of series resistance on calculation of the interface state density distribution in Schottky diodes, INT J ELECT, 88(6), 2001, pp. 625-633
Synthesis of 4-benzyl-1-piperazineglyoxime and its use in the spectrophotometric determination of nickel
Authors: Macit, M Bati, H Bati, B
Citation: M. Macit et al., Synthesis of 4-benzyl-1-piperazineglyoxime and its use in the spectrophotometric determination of nickel, TURK J CHEM, 24(1), 2000, pp. 81-88
On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact
Authors: Bati, B Nuhoglu, C Saglam, M Ayyildiz, E Turut, A
Citation: B. Bati et al., On the forward bias excess capacitance at intimate and MIS Schottky barrier diodes with perfect or imperfect ohmic back contact, PHYS SCR, 61(2), 2000, pp. 209-212
Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts
Authors: Nuhoglu, C Temirci, C Bati, B Biber, M Turut, A
Citation: C. Nuhoglu et al., Effect of thermal annealing on Co/n-LEC GaAs (Te) Schottky contacts, SOL ST COMM, 115(6), 2000, pp. 291-295
Determination of copper by FAAS after preconcentration with lead-4-methylpiperidinedithiocarbamate on microcrystalline naphthalene by solid-phase extraction
Authors: Cesur, H Bati, B
Citation: H. Cesur et B. Bati, Determination of copper by FAAS after preconcentration with lead-4-methylpiperidinedithiocarbamate on microcrystalline naphthalene by solid-phase extraction, ANAL LETTER, 33(3), 2000, pp. 489-501
Determination of copper, nickel and cadmium by FAAS after preconcentrationwith zinc-piperazinedithiocarbamate loaded on activated carbon by solid-phase extraction
Authors: Cesur, H Macit, M Bati, B
Citation: H. Cesur et al., Determination of copper, nickel and cadmium by FAAS after preconcentrationwith zinc-piperazinedithiocarbamate loaded on activated carbon by solid-phase extraction, ANAL LETTER, 33(10), 2000, pp. 1991-2004
Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes
Authors: Ayyildiz, E Bati, B Temirci, C Turut, A
Citation: E. Ayyildiz et al., Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes, APPL SURF S, 152(1-2), 1999, pp. 57-62
Risultati: 1-10 |