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Results: 1-11 |
Results: 11
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Authors: Valcheva, E Paskova, T Abrashev, MV Persson, PAO Paskov, PP Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors (R)
Authors: Beccard, R Protzmann, H Luenenbuerger, M Schineller, B Heuken, M
Citation: R. Beccard et al., Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors (R), MAT SCI E B, 80(1-3), 2001, pp. 50-53
Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy
Authors: Wang, CX Chung, HYA Seyboth, M Kamp, M Ebeling, KJ Beccard, R Heuken, M
Citation: Cx. Wang et al., Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 377-380
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Authors: Valcheva, E Paskova, T Abrashev, MV Paskov, PP Persson, POA Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123
Hydride vapour phase epitaxy growth of GaN layers under reduced reactor pressure
Authors: Chung, HYA Wang, C Kirchner, C Seyboth, M Schwegler, V Scherer, M Kamp, M Ebeling, KJE Beccard, R Heuken, M
Citation: Hya. Chung et al., Hydride vapour phase epitaxy growth of GaN layers under reduced reactor pressure, PHYS ST S-A, 180(1), 2000, pp. 257-260
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy
Authors: Lourdudoss, S Gopalakrishnan, N Holz, R Deschler, M Beccard, R
Citation: S. Lourdudoss et al., Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy, MET MAT T A, 30(4), 1999, pp. 1047-1051
High temperature CVD systems to grow GaN or SiC based structures
Authors: Beccard, R Schmitz, D Woelk, EG Strauch, G Makarov, Y Heuken, M Deschler, M Juergensen, H
Citation: R. Beccard et al., High temperature CVD systems to grow GaN or SiC based structures, MAT SCI E B, 61-2, 1999, pp. 314-319
Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers
Authors: Paskova, T Birch, J Tungasmita, S Beccard, R Heuken, M Svedberg, EB Runesson, P Goldys, EM Monemar, B
Citation: T. Paskova et al., Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, PHYS ST S-A, 176(1), 1999, pp. 415-419
A novel reactor concept for multiwafer growth of III-V semiconductors
Authors: Beccard, R Protzmann, H Schmitz, D Strauch, G Heuken, M Juergensen, H
Citation: R. Beccard et al., A novel reactor concept for multiwafer growth of III-V semiconductors, J CRYST GR, 199, 1999, pp. 1049-1055
Risultati: 1-11 |