Authors: Badila, M Godignon, P Millan, J Berberich, S Brezeanu, G

Citation: M. Badila et al., The electron irradiation effects on silicon gate dioxide used for power MOS devices, MICROEL REL, 41(7), 2001, pp. 1015-1018

Authors: Berberich, S Godignon, P Morvan, E Fonseca, L Millan, J Hartnagel, HL

Citation: S. Berberich et al., Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC, MICROEL REL, 40(4-5), 2000, pp. 833-836

Authors: Berberich, S Godignon, P Millan, J Planson, D Hartnagel, HL Senes, A

Citation: S. Berberich et al., Electrical characterisation of MNOS devices on p-type 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 305-308

Authors: Morvan, E Godignon, P Berberich, S Vellvehi, M Millan, J

Citation: E. Morvan et al., Electronic stopping power for Monte Carlo simulation of ion implantation into SiC, NUCL INST B, 147(1-4), 1999, pp. 68-73