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Results:
1-11
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Results: 11
Authors:
Starikov, D
Boney, C
Berishev, I
Hernandez, IC
Bensaoula, A
Citation: D. Starikov et al., Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications, J VAC SCI B, 19(4), 2001, pp. 1404-1408
Authors:
Jadwisienczak, WM
Lozykowski, HJ
Berishev, I
Bensaoula, A
Brown, IG
Citation: Wm. Jadwisienczak et al., Visible emission from AlN doped with Eu and Tb ions, J APPL PHYS, 89(8), 2001, pp. 4384-4390
Authors:
Starikov, D
Berishev, I
Um, JW
Badi, N
Medelci, N
Tempez, A
Bensaoula, A
Citation: D. Starikov et al., Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum, J VAC SCI B, 18(6), 2000, pp. 2620-2623
Authors:
Kim, E
Tempez, A
Medelci, N
Berishev, I
Bensaoula, A
Citation: E. Kim et al., Selective area growth of GaN on Si(111) by chemical beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1130-1134
Authors:
Medelci, N
Tempez, A
Starikov, D
Badi, N
Berishev, I
Bensaoula, A
Citation: N. Medelci et al., Etch characteristics of GaN and BN materials in chlorine-based plasmas, J ELEC MAT, 29(9), 2000, pp. 1079-1083
Authors:
Kim, E
Berishev, I
Bensaoula, A
Schultz, JA
Citation: E. Kim et al., In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions, J VAC SCI B, 17(3), 1999, pp. 1209-1213
Authors:
Berishev, I
Kim, E
Fartassi, A
Sayhi, M
Bensaoula, A
Citation: I. Berishev et al., Mg doping studies of electron cyclotron resonance molecular beam epitaxy of GaN thin Films, J VAC SCI A, 17(4), 1999, pp. 2166-2169
Authors:
Tempez, A
Medelci, N
Badi, N
Berishev, I
Starikov, D
Bensaoula, A
Citation: A. Tempez et al., Photoenhanced reactive ion etching of III-V nitrides in BCl3/Cl-2/Ar/N-2 plasmas, J VAC SCI A, 17(4), 1999, pp. 2209-2213
Authors:
Starikov, D
Badi, N
Berishev, I
Medelci, N
Kameli, O
Sayhi, M
Zomorrodian, V
Bensaoula, A
Citation: D. Starikov et al., Metal-insulator-semiconductor Schottky barrier structures fabricated usinginterfacial BN layers grown on GaN and SiC for optoelectronic device applications, J VAC SCI A, 17(4), 1999, pp. 1235-1238
Authors:
Kim, E
Berishev, I
Bensaoula, A
Rusakova, I
Waters, K
Schultz, JA
Citation: E. Kim et al., Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN, J APPL PHYS, 85(2), 1999, pp. 1178-1185
Authors:
Tran, CA
Osinski, A
Karlicek, RF
Berishev, I
Citation: Ca. Tran et al., Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy, APPL PHYS L, 75(11), 1999, pp. 1494-1496
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