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Results: 1-8 |
Results: 8

Authors: Tudury, HAP Nakaema, MKK Iikawa, R Brum, JA Ribeiro, E Carvalho, W Bernussi, AA Gobbi, AL
Citation: Hap. Tudury et al., Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301, PHYS REV B, 6415(15), 2001, pp. 3301

Authors: Bernussi, AA Carvalho, W Franco, MKKD
Citation: Aa. Bernussi et al., Effects of ordering and alloy phase separation on the optical emission characteristics of In1-xGaxAsyP1-y layers grown on GaAs substrates, J APPL PHYS, 89(9), 2001, pp. 4898-4901

Authors: Medeiros-Ribeiro, G Maltez, RL Bernussi, AA Ugarte, D de Carvalho, W
Citation: G. Medeiros-ribeiro et al., Seeding of InP islands on InAs quantum dot templates, J APPL PHYS, 89(11), 2001, pp. 6548-6550

Authors: de Carvalho, W Furtado, MT Bernussi, AA Gobbi, AL Cotta, MA
Citation: W. De Carvalho et al., Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE, J ELEC MAT, 29(1), 2000, pp. 62-68

Authors: Bernussi, AA Carvalho, W Furtado, MT Gobbi, AL
Citation: Aa. Bernussi et al., Strain and relaxation processes in In1-xGaxAsyP1-y/InP single quantum wells grown by LP-MOVPE, BRAZ J PHYS, 29(4), 1999, pp. 746-750

Authors: de Carvalho, W Bernussi, AA Furtado, MT Gobbi, AL Cotta, M
Citation: W. De Carvalho et al., Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications, BRAZ J PHYS, 29(4), 1999, pp. 839-842

Authors: Bernussi, AA Carvalho, W Furtado, MT Gobbi, AL
Citation: Aa. Bernussi et al., Photoluminescence microscopy imaging of tensile strained In1-xGaxAsyP1-y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 402-407

Authors: Lucio, AD Cury, LA Matinaga, FM Sampaio, JF Bernussi, AA de Carvalho, W
Citation: Ad. Lucio et al., Arrhenius analysis optical transitions in strained InGaAsP quantum wells, J APPL PHYS, 86(1), 1999, pp. 537-542
Risultati: 1-8 |