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Results:
1-8
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Results: 8
Authors:
Tudury, HAP
Nakaema, MKK
Iikawa, R
Brum, JA
Ribeiro, E
Carvalho, W
Bernussi, AA
Gobbi, AL
Citation: Hap. Tudury et al., Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301, PHYS REV B, 6415(15), 2001, pp. 3301
Authors:
Bernussi, AA
Carvalho, W
Franco, MKKD
Citation: Aa. Bernussi et al., Effects of ordering and alloy phase separation on the optical emission characteristics of In1-xGaxAsyP1-y layers grown on GaAs substrates, J APPL PHYS, 89(9), 2001, pp. 4898-4901
Authors:
Medeiros-Ribeiro, G
Maltez, RL
Bernussi, AA
Ugarte, D
de Carvalho, W
Citation: G. Medeiros-ribeiro et al., Seeding of InP islands on InAs quantum dot templates, J APPL PHYS, 89(11), 2001, pp. 6548-6550
Authors:
de Carvalho, W
Furtado, MT
Bernussi, AA
Gobbi, AL
Cotta, MA
Citation: W. De Carvalho et al., Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE, J ELEC MAT, 29(1), 2000, pp. 62-68
Authors:
Bernussi, AA
Carvalho, W
Furtado, MT
Gobbi, AL
Citation: Aa. Bernussi et al., Strain and relaxation processes in In1-xGaxAsyP1-y/InP single quantum wells grown by LP-MOVPE, BRAZ J PHYS, 29(4), 1999, pp. 746-750
Authors:
de Carvalho, W
Bernussi, AA
Furtado, MT
Gobbi, AL
Cotta, M
Citation: W. De Carvalho et al., Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications, BRAZ J PHYS, 29(4), 1999, pp. 839-842
Authors:
Bernussi, AA
Carvalho, W
Furtado, MT
Gobbi, AL
Citation: Aa. Bernussi et al., Photoluminescence microscopy imaging of tensile strained In1-xGaxAsyP1-y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 402-407
Authors:
Lucio, AD
Cury, LA
Matinaga, FM
Sampaio, JF
Bernussi, AA
de Carvalho, W
Citation: Ad. Lucio et al., Arrhenius analysis optical transitions in strained InGaAsP quantum wells, J APPL PHYS, 86(1), 1999, pp. 537-542
Risultati:
1-8
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