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Results: 1-15 |
Results: 15

Authors: Dimroth, F Beckert, R Meusel, M Schubert, U Bett, AW
Citation: F. Dimroth et al., Metamorphic GayIn1-yP/Ga1-xInxAs tandem solar cells for space and for terrestrial concentrator applications at C > 1000 suns, PROG PHOTOV, 9(3), 2001, pp. 165-178

Authors: Sulima, OV Bett, AW
Citation: Ov. Sulima et Aw. Bett, Fabrication and simulation of GaSb thermophotovoltaic cells, SOL EN MAT, 66(1-4), 2001, pp. 533-540

Authors: Bett, AW Adelhelm, R Agert, C Beckert, R Dimroth, F Schubert, U
Citation: Aw. Bett et al., Advanced III-V solar cell structures grown by MOVPE, SOL EN MAT, 66(1-4), 2001, pp. 541-550

Authors: Agert, C Dimroth, F Schubert, U Bett, AW Leu, S Stolz, W
Citation: C. Agert et al., High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios, SOL EN MAT, 66(1-4), 2001, pp. 637-644

Authors: Agert, C Lanyi, P Bett, AW
Citation: C. Agert et al., MOVPE of GaSb, (AlGa)Sb and (AlGa)(AsSb) in a multiwafer planetary reactor, J CRYST GR, 225(2-4), 2001, pp. 426-430

Authors: Agert, C Lanyi, P Sulima, OV Stolz, W Bett, AW
Citation: C. Agert et al., Growth of antimony-based materials in a multiwafer planetary MOVPE-reactor, IEE P-OPTO, 147(3), 2000, pp. 188-192

Authors: Sulima, OV Beckert, R Bett, AW Cox, JA Mauk, MG
Citation: Ov. Sulima et al., InGaAsSb photovoltaic cells with enhanced open-circuit voltage, IEE P-OPTO, 147(3), 2000, pp. 199-204

Authors: Dimroth, F Schubert, U Bett, AW
Citation: F. Dimroth et al., 25.5% efficient Ga0.35In0.65P/Ga0.83In0.17 as tandem solar cells grown on GaAs substrates, IEEE ELEC D, 21(5), 2000, pp. 209-211

Authors: Dimroth, F Lanyi, P Schubert, U Bett, AW
Citation: F. Dimroth et al., MOVPE grown Ga1-xInxAs solar cells for GaInP/GaInAs tandem applications, J ELEC MAT, 29(1), 2000, pp. 42-46

Authors: Dimroth, F Schubert, U Schienle, F Bett, AW
Citation: F. Dimroth et al., High C-doping of MOVPE grown thin AlxGa1-xAs layers for AlGaAs/GaAs interband tunneling devices, J ELEC MAT, 29(1), 2000, pp. 47-52

Authors: Smith, LM Rushworth, SA Ravetz, MS Odedra, R Kanjolia, R Agert, C Dimroth, F Schubert, U Bett, AW
Citation: Lm. Smith et al., Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices, J CRYST GR, 221, 2000, pp. 86-90

Authors: Mauk, MG Shellenbarger, ZA Cox, JA Sulima, OV Bett, AW Mueller, RL Sims, PE McNeely, JB DiNetta, LC
Citation: Mg. Mauk et al., Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices, J CRYST GR, 211(1-4), 2000, pp. 189-193

Authors: Stollwerck, G Sulima, OV Bett, AW
Citation: G. Stollwerck et al., Characterization and simulation of GaSb device-related properties, IEEE DEVICE, 47(2), 2000, pp. 448-457

Authors: Sulima, OV Bett, AW Wagner, J
Citation: Ov. Sulima et al., Anodic oxidation of GaSb in acid-glycol-water electrolytes, J ELCHEM SO, 147(5), 2000, pp. 1910-1914

Authors: Bett, AW Dimroth, F Stollwerck, G Sulima, OV
Citation: Aw. Bett et al., III-V compounds for solar cell applications, APPL PHYS A, 69(2), 1999, pp. 119-129
Risultati: 1-15 |