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Results: 1-12 |
Results: 12
Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction
Authors: Deshmukh, NV Bhave, TM Ethiraj, AS Sainkar, SR Ganesan, V Bhoraskar, SV Kulkarni, SK
Citation: Nv. Deshmukh et al., Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction, NANOTECHNOL, 12(3), 2001, pp. 290-294
Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy
Authors: Hulluvarad, SS Naddaf, M Bhoraskar, SV
Citation: Ss. Hulluvarad et al., Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy, NUCL INST B, 183(3-4), 2001, pp. 432-438
Nitridation of steel using a microwave ECR plasma
Authors: Naddaf, M Hullavarad, SS Bhoraskar, VN Sainkar, SR Mandale, AB Bhoraskar, SV
Citation: M. Naddaf et al., Nitridation of steel using a microwave ECR plasma, VACUUM, 64(2), 2001, pp. 163-168
Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs
Authors: Hullavarad, SS Nikesh, VV Sainkar, SR Ganesan, V Mahamuni, S Bhoraskar, SV
Citation: Ss. Hullavarad et al., Unpinning of surface state at 0.92 eV by nanocrystalline ZnSe on GaAs, THIN SOL FI, 381(1), 2001, pp. 69-72
Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects
Authors: Railkar, TA Malshe, AP Brown, WD Hullavarad, SS Bhoraskar, SV
Citation: Ta. Railkar et al., Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects, J APPL PHYS, 89(9), 2001, pp. 4766-4771
Optoelectronic characterisation of porous silicon/CdS and ZnS systems
Authors: Gokarna, A Bhoraskar, SV Pavaskar, NR Sathaye, SD
Citation: A. Gokarna et al., Optoelectronic characterisation of porous silicon/CdS and ZnS systems, PHYS ST S-A, 182(1), 2000, pp. 175-179
Nanophase alumina synthesis in thermal arc plasma and characterization: correlation to gas-phase studies
Authors: Kumar, PM Balasubramanian, C Sali, ND Bhoraskar, SV Rohatgi, VK Badrinarayanan, S
Citation: Pm. Kumar et al., Nanophase alumina synthesis in thermal arc plasma and characterization: correlation to gas-phase studies, MAT SCI E B, 63(3), 1999, pp. 215-227
Oxygen related defects in high energy ion irradiated GaAs
Authors: Hullavarad, SS Bhoraskar, SV Kanjilal, D
Citation: Ss. Hullavarad et al., Oxygen related defects in high energy ion irradiated GaAs, NUCL INST B, 156(1-4), 1999, pp. 95-99
Effect of swift high energy phosphorous ions on the optical and electricalproperties of porous silicon
Authors: Gokarna, A Bhave, TM Bhoraskar, SV Kanjilal, D
Citation: A. Gokarna et al., Effect of swift high energy phosphorous ions on the optical and electricalproperties of porous silicon, NUCL INST B, 156(1-4), 1999, pp. 100-104
FTIR studies of swift silicon and oxygen ion irradiated porous silicon
Authors: Bhave, TM Hullavarad, SS Bhoraskar, SV Hegde, SG Kanjilal, D
Citation: Tm. Bhave et al., FTIR studies of swift silicon and oxygen ion irradiated porous silicon, NUCL INST B, 156(1-4), 1999, pp. 121-124
Deep levels in GaN grown by nitridation of GaAs (110) surface in a electron cyclotron-resonance ammonia plasma
Authors: Hullavarad, SS Bhoraskar, SV Sainkar, SR Badrinarayanan, S Mandale, AB Ganesan, V
Citation: Ss. Hullavarad et al., Deep levels in GaN grown by nitridation of GaAs (110) surface in a electron cyclotron-resonance ammonia plasma, VACUUM, 55(2), 1999, pp. 121-126
Electron exo-emission study of PECVD and thermal CVD silicon rich silicon oxide
Authors: Dusane, S Bhave, T Hullavard, S Bhoraskar, SV Lokhare, S
Citation: S. Dusane et al., Electron exo-emission study of PECVD and thermal CVD silicon rich silicon oxide, SOL ST COMM, 111(8), 1999, pp. 431-435
Risultati: 1-12 |