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Results: 1-6 |
Results: 6

Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE, J ELEC MAT, 29(4), 2000, pp. 426-429

Authors: Bieg, B Cederberg, JG Kuech, TF
Citation: B. Bieg et al., High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x> 0.65), J ELEC MAT, 29(2), 2000, pp. 231-236

Authors: Szatkowski, J Placzek-Popko, E Sieranski, K Bieg, B
Citation: J. Szatkowski et al., Defect studies in Cd0.95Mn0.05Te : Ga by DLTS, J CRYST GR, 197(3), 1999, pp. 684-687

Authors: Cederberg, JG Culp, TD Bieg, B Pfeiffer, D Winter, CH Bray, KL Kuech, TF
Citation: Jg. Cederberg et al., Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J APPL PHYS, 85(3), 1999, pp. 1825-1831

Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68

Authors: Cederberg, JG Culp, TD Bieg, B Pfeiffer, D Winter, CH Bray, KL Kuech, TF
Citation: Jg. Cederberg et al., Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J CRYST GR, 195(1-4), 1998, pp. 105-111
Risultati: 1-6 |