Authors:
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
Citation: Jg. Cederberg et al., Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J APPL PHYS, 85(3), 1999, pp. 1825-1831
Authors:
Cederberg, JG
Bieg, B
Huang, JW
Stockman, SA
Peanasky, MJ
Kuech, TF
Citation: Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68
Authors:
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
Citation: Jg. Cederberg et al., Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J CRYST GR, 195(1-4), 1998, pp. 105-111