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Results: 1-11 |
Results: 11
Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE)
Authors: Hommerich, U Seo, JT MacKenzie, JD Abernathy, CR Birkhahn, R Steckl, AJ Zavada, JM
Citation: U. Hommerich et al., Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecularbeam epitaxy (SSMBE), MRS I J N S, 5, 2000, pp. NIL_709-NIL_714
RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates
Authors: Lorenz, K Vianden, R Birkhahn, R Steckl, AJ da Silva, MF Soares, JC Alves, E
Citation: K. Lorenz et al., RBS/channeling study of Er doped GaN films grown by MBE on Si(111) substrates, NUCL INST B, 161, 2000, pp. 946-951
Local structure and bonding of Er in GaN: A contrast with Er in Si
Authors: Citrin, PH Northrup, PA Birkhahn, R Steckl, AJ
Citation: Ph. Citrin et al., Local structure and bonding of Er in GaN: A contrast with Er in Si, APPL PHYS L, 76(20), 2000, pp. 2865-2867
Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
Authors: Lee, DS Heikenfeld, J Birkhahn, R Garter, M Lee, BK Steckl, AJ
Citation: Ds. Lee et al., Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu, APPL PHYS L, 76(12), 2000, pp. 1525-1527
Low-voltage GaN : Er green electroluminescent devices
Authors: Heikenfeld, J Lee, DS Garter, M Birkhahn, R Steckl, AJ
Citation: J. Heikenfeld et al., Low-voltage GaN : Er green electroluminescent devices, APPL PHYS L, 76(11), 2000, pp. 1365-1367
Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Authors: Birkhahn, R Hudgins, R Lee, D Steckl, AJ Molnar, RJ Saleh, A Zavada, JM
Citation: R. Birkhahn et al., Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates, J VAC SCI B, 17(3), 1999, pp. 1195-1199
Painless intussusception and altered mental status
Authors: Birkhahn, R Fiorini, M Gaeta, TJ
Citation: R. Birkhahn et al., Painless intussusception and altered mental status, AM J EMER M, 17(4), 1999, pp. 345-347
Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
Authors: Heikenfeld, J Garter, M Lee, DS Birkhahn, R Steckl, AJ
Citation: J. Heikenfeld et al., Red light emission by photoluminescence and electroluminescence from Eu-doped GaN, APPL PHYS L, 75(9), 1999, pp. 1189-1191
Blue emission from Tm-doped GaN electroluminescent devices
Authors: Steckl, AJ Garter, M Lee, DS Heikenfeld, J Birkhahn, R
Citation: Aj. Steckl et al., Blue emission from Tm-doped GaN electroluminescent devices, APPL PHYS L, 75(15), 1999, pp. 2184-2186
Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN : Er on Si
Authors: Garter, M Scofield, J Birkhahn, R Steckl, AJ
Citation: M. Garter et al., Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN : Er on Si, APPL PHYS L, 74(2), 1999, pp. 182-184
Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
Authors: Birkhahn, R Garter, M Steckl, AJ
Citation: R. Birkhahn et al., Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates, APPL PHYS L, 74(15), 1999, pp. 2161-2163
Risultati: 1-11 |