Authors: Bissiri, M Gaspari, V Baldassarri, G Ranalli, F Polimeni, A Capizzi, M Nucara, A Geddo, M Fischer, M Reinhardt, M Forchel, A

Citation: M. Bissiri et al., Effect of hydrogen on the electronic properties of GaAs1-yNy heterostructures, ACT PHY P A, 100(3), 2001, pp. 365-371

Authors: Baldassarri, G Ranalli, F Bissiri, M Gaspari, V Polimeni, A Capizzi, M Nucara, A Geddo, M Fischer, M Reinhardt, M Forchel, A

Citation: G. Baldassarri et al., Hydrogen tuning of (InGa)(AsN) optical properties, ACT PHY P A, 100(3), 2001, pp. 373-378

Authors: Bissiri, M Baldassarri, G Von H, GBH Capizzi, M Fomin, VM Gladilin, VN Devreese, JT

Citation: M. Bissiri et al., Polaron interaction in InAs/GaAs quantum dots and resonant photoluminescence, PHYS ST S-B, 224(3), 2001, pp. 639-642

Authors: Bissiri, M Gaspari, V Polimeni, A von Hogersthal, GBH Capizzi, M Frova, A Fischer, M Reinhardt, M Forchel, A

Citation: M. Bissiri et al., High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells, APPL PHYS L, 79(16), 2001, pp. 2585-2587

Authors: Baldassarri, G Bissiri, M Polimeni, A Capizzi, M Fischer, M Reinhardt, M Forchel, A

Citation: G. Baldassarri et al., Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells, APPL PHYS L, 78(22), 2001, pp. 3472-3474

Authors: Bissiri, M von Hogersthal, GBH Bhatti, AS Capizzi, M Frova, A Frigeri, P Franchi, S

Citation: M. Bissiri et al., Optical evidence of polaron interaction in InAs/GaAs quantum dots, PHYS REV B, 62(7), 2000, pp. 4642-4646