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Castan, H
Duenas, S
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Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTSand conductance transient techniques, MICROEL REL, 40(4-5), 2000, pp. 845-848
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Long, AR
Citation: R. Cusco et al., Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors, J APPL PHYS, 88(11), 2000, pp. 6567-6570
Authors:
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Lozano, R
Citation: R. Otero et al., A randomized blinded clinical trial of two antivenoms, prepared by caprylic acid or ammonium sulphate fractionation of IgG, in Bothrops and Porthidium snake bites in Colombia: correlation between safety and biochemical characteristics of antivenoms, TOXICON, 37(6), 1999, pp. 895-908
Authors:
Redondo, E
Blanco, N
Martil, I
Gonzalez-Diaz, G
Citation: E. Redondo et al., Low interface trap density in rapid thermally annealed Al/SiNx : H/InP metal-insulator-semiconductor devices, APPL PHYS L, 74(7), 1999, pp. 991-993