ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application

Authors: Lohse, O Grossmann, M Bolten, D Boettger, U Waser, R

Citation: O. Lohse et al., Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application, INTEGR FERR, 33(1-4), 2001, pp. 39-48

Influence of the measurement parameters on the reliability of ferroelectric thin films

Authors: Grossmann, M Lohse, O Bolten, D Boettger, U Waser, R Tiedke, S Schmitz, T Kall, U Kastner, M Schindler, G Hartner, W

Citation: M. Grossmann et al., Influence of the measurement parameters on the reliability of ferroelectric thin films, INTEGR FERR, 32(1-4), 2001, pp. 693-701

Irreversible polarization in donor doped Pb(Zr, Ti)O-3

Authors: Bolten, D Bottger, U Schneller, T Grossmann, M Lohse, O Waser, R

Citation: D. Bolten et al., Irreversible polarization in donor doped Pb(Zr, Ti)O-3, INTEGR FERR, 32(1-4), 2001, pp. 785-791

Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O-3 thin films

Authors: Lohse, O Grossmann, M Boettger, U Bolten, D Waser, R

Citation: O. Lohse et al., Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O-3 thin films, J APPL PHYS, 89(4), 2001, pp. 2332-2336

Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O-3

Authors: Bolten, D Bottger, U Schneller, T Grossmann, M Lohse, O Waser, R

Citation: D. Bolten et al., Reversible and irreversible processes in donor-doped Pb(Zr,Ti)O-3, APPL PHYS L, 77(23), 2000, pp. 3830-3832

Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films

Authors: Grossmann, M Bolten, D Lohse, O Boettger, U Waser, R Tiedke, S

Citation: M. Grossmann et al., Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films, APPL PHYS L, 77(12), 2000, pp. 1894-1896

Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films

Authors: Grossmann, M Lohse, O Bolten, D Boettger, U Waser, R Hartner, W Kastner, M Schindler, G

Citation: M. Grossmann et al., Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films, APPL PHYS L, 76(3), 2000, pp. 363-365

Reversible and irreversible domainwall contributions to the polarization in CSD prepared Ba1-xPbx(Ti,Mn)O-3 thin films

Authors: Hoffman, M Bolten, D Hasenkox, U Lohse, O Waser, R

Citation: M. Hoffman et al., Reversible and irreversible domainwall contributions to the polarization in CSD prepared Ba1-xPbx(Ti,Mn)O-3 thin films, INTEGR FERR, 26(1-4), 1999, pp. 1033-1044

Influence of crystallization kinetics on texture of sol-gel PZT and BST thin films

Authors: Shur, VY Blankova, EB Subbotin, AL Borisova, EA Pelegov, DV Hoffmann, S Bolten, D Gerhardt, R Waser, R

Citation: Vy. Shur et al., Influence of crystallization kinetics on texture of sol-gel PZT and BST thin films, J EUR CERAM, 19(6-7), 1999, pp. 1391-1395

Critical current densities of melt-textured and neutron-irradiated NdBa2Cu3O7-delta

Authors: Bolten, D Ullrich, M Freyhardt, HC Sauerzopf, FM Weber, HW

Citation: D. Bolten et al., Critical current densities of melt-textured and neutron-irradiated NdBa2Cu3O7-delta, MAT SCI E B, 65(1), 1999, pp. 35-41

Chemical solution deposition (CSD) and characterization of the solid solution series Ba(1-x)Pbx(Ti,Mn)O-3

Authors: Bolten, D Hoffmann, M Hasenkox, U Lohse, O Waser, R

Citation: D. Bolten et al., Chemical solution deposition (CSD) and characterization of the solid solution series Ba(1-x)Pbx(Ti,Mn)O-3, FERROELECTR, 225(1-4), 1999, pp. 923-929

Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films

Authors: Bolten, D Lohse, O Grossmann, M Waser, R

Citation: D. Bolten et al., Reversible and irreversible domain wall contributions to the polarization in ferroelectric thin films, FERROELECTR, 221(1-4), 1999, pp. 251-257

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