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Results: 1-13 |
Results: 13
Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
Authors: Bonar, JM Willoughby, AFW Dan, AH McGregor, BM Lerch, W Loeffelmacher, D Cooke, GA Dowsett, MG
Citation: Jm. Bonar et al., Antimony and boron diffusion in SiGe and Si under the influence of injected point defects, J MAT S-M E, 12(4-6), 2001, pp. 219-221
Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy
Authors: Lamb, AC Schiz, JFW Bonar, JM Cristiano, F Ashburn, P Hall, S Hemment, PLF
Citation: Ac. Lamb et al., Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy, MICROEL REL, 41(2), 2001, pp. 273-279
Diffusion of ion-implanted boron in germanium
Authors: Uppal, S Willoughby, AFW Bonar, JM Evans, AGR Cowern, NEB Morris, R Dowsett, MG
Citation: S. Uppal et al., Diffusion of ion-implanted boron in germanium, J APPL PHYS, 90(8), 2001, pp. 4293-4295
Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy
Authors: Schiz, JFW Lamb, AC Cristiano, F Bonar, JM Ashburn, P Hall, S Hemment, PLF
Citation: Jfw. Schiz et al., Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy, IEEE DEVICE, 48(11), 2001, pp. 2492-2499
Characterization of morphology and defects in silicon-germanium virtual substrates
Authors: Dilliway, GDM Willoughby, AFW Bonar, JM
Citation: Gdm. Dilliway et al., Characterization of morphology and defects in silicon-germanium virtual substrates, J MAT S-M E, 11(7), 2000, pp. 549-556
Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography
Authors: McNally, PJ Dilliway, G Bonar, JM Willoughby, A Tuomi, T Rantamaki, R Danilewsky, AN Lowney, D
Citation: Pj. Mcnally et al., Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection X-ray topography, PHYS ST S-A, 180(1), 2000, pp. R1-R3
Hole transport through single and double SiGe quantum dots
Authors: Cain, PA Ahmed, H Williams, DA Bonar, JM
Citation: Pa. Cain et al., Hole transport through single and double SiGe quantum dots, APPL PHYS L, 77(21), 2000, pp. 3415-3417
On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure
Authors: McNally, PJ Dilliway, G Bonar, JM Willoughby, A Tuomi, T Rantamaki, R Danilewsky, AN Lowney, D
Citation: Pj. Mcnally et al., On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure, APPL PHYS L, 77(11), 2000, pp. 1644-1646
Point defect redistribution in Si1-xGex alloys
Authors: Paine, ADN Willoughby, AFW Bonar, JM
Citation: Adn. Paine et al., Point defect redistribution in Si1-xGex alloys, J MAT S-M E, 10(5-6), 1999, pp. 339-343
Selective and non-selective growth of self-aligned SiGeHBT structures by LPCVD epitaxy
Authors: Bonar, JM Schiz, J Ashburn, P
Citation: Jm. Bonar et al., Selective and non-selective growth of self-aligned SiGeHBT structures by LPCVD epitaxy, J MAT S-M E, 10(5-6), 1999, pp. 345-349
Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator
Authors: Kanjanachuchai, S Bonar, JM Ahmed, H
Citation: S. Kanjanachuchai et al., Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator, SEMIC SCI T, 14(12), 1999, pp. 1065-1068
Single-hole tunnelling in SiGe nanostructures
Authors: Kanjanachuchai, S Bonar, JM Parker, GJ Ahmed, H
Citation: S. Kanjanachuchai et al., Single-hole tunnelling in SiGe nanostructures, MICROEL ENG, 46(1-4), 1999, pp. 137-140
The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si :Si0.9Ge0.1 : Si substrates
Authors: Riley, LS Hall, S Bonar, JM
Citation: Ls. Riley et al., The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si :Si0.9Ge0.1 : Si substrates, SOL ST ELEC, 43(12), 1999, pp. 2247-2250
Risultati: 1-13 |