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Results: 1-9 |
Results: 9

Authors: Mock, P Laczik, ZJ Booker, GR
Citation: P. Mock et al., Thermal processing induced plastic deformation in GaAs wafers, MAT SCI E B, 80(1-3), 2001, pp. 91-94

Authors: Mock, P Booker, GR Mason, NJ Nicholas, RJ Aphandery, E Topuria, T Browning, ND
Citation: P. Mock et al., MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL, MAT SCI E B, 80(1-3), 2001, pp. 112-115

Authors: Rahim, AIA Marsh, CD Ashburn, P Booker, GR
Citation: Aia. Rahim et al., Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts, IEEE DEVICE, 48(11), 2001, pp. 2506-2513

Authors: Mock, P Topuria, T Browning, ND Booker, GR Mason, NJ Nicholas, RJ Dobrowolska, M Lee, S Furdyna, JK
Citation: P. Mock et al., Internal self-ordering in In(Sb,As), (In,Ga)Sb, and (Cd,Zn,Mn)Se nano-agglomerates/quantum dots, APPL PHYS L, 79(7), 2001, pp. 946-948

Authors: Mock, P Booker, GR Mason, NJ Alphandery, E Nicholas, RJ
Citation: P. Mock et al., MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM, IEE P-OPTO, 147(3), 2000, pp. 209-215

Authors: Marsh, CD Moiseiwitsch, NE Booker, GR Ashburn, P
Citation: Cd. Marsh et al., Behavior and effects of fluorine in annealed n(+) polycrystalline silicon layers on silicon wafers, J APPL PHYS, 87(10), 2000, pp. 7567-7578

Authors: Nash, GR Schiz, JFW Marsh, CD Ashburn, P Booker, GR
Citation: Gr. Nash et al., Activation energy for fluorine transport in amorphous silicon, APPL PHYS L, 75(23), 1999, pp. 3671-3673

Authors: Alphandery, E Nicholas, RJ Mason, NJ Zhang, B Mock, P Booker, GR
Citation: E. Alphandery et al., Self-assembled InSb quantum dots grown on GaSb: A photoluminescence, magnetoluminescence, and atomic force microscopy study, APPL PHYS L, 74(14), 1999, pp. 2041-2043

Authors: Moiseiwitsch, NE Ashburn, P Marsh, CD Booker, GR
Citation: Ne. Moiseiwitsch et al., Assessment of a methanol-last interface treatment for use in polysilicon emitter bipolar transistor fabrication, EL SOLID ST, 1(2), 1998, pp. 91-93
Risultati: 1-9 |