Authors: Bournel, A Delmouly, V Dollfus, P Tremblay, G Hesto, P

Citation: A. Bournel et al., Theoretical and experimental considerations on the spin field effect transistor, PHYSICA E, 10(1-3), 2001, pp. 86-90

Authors: Delmouly, V Bournel, A Tremblay, G Hesto, P

Citation: V. Delmouly et al., Physical and magnetic properties of Co-oxide-GaAs contacts, THIN SOL FI, 384(2), 2001, pp. 282-287

Authors: Bournel, A Dollfus, P Cassan, E Hesto, P

Citation: A. Bournel et al., Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells, APPL PHYS L, 77(15), 2000, pp. 2346-2348

Authors: Bournel, A

Citation: A. Bournel, Magnetoelectronics in semiconductor devices, ANN PHYSIQ, 25(1), 2000, pp. 1

Authors: Bournel, A Dollfus, P Bruno, P Hesto, P

Citation: A. Bournel et al., Spin-dependent transport phenomena in a HEMT, PHYSICA B, 272(1-4), 1999, pp. 331-334

Authors: Bournel, A Dollfus, P Bruno, P Hesto, P

Citation: A. Bournel et al., Gate-induced spin precession in an In0.53Ga0.47As two dimensional electrongas, EPJ-APPL PH, 4(1), 1998, pp. 1-4