Authors:
Ahouassa, P
Boussey, J
Bouthinon, M
Vilcot, A
Citation: P. Ahouassa et al., Impact of the contact nature on the microwave behavior of optically controlled passive components, MICROW OPT, 30(4), 2001, pp. 257-261
Authors:
Munteanu, D
Cristoloveanu, S
Rozeau, O
Jomaah, J
Boussey, J
Wetzel, M
de la Houssaye, P
Lagnado, I
Citation: D. Munteanu et al., Characterization of silicon-on-sapphire material and devices for radio frequency applications, J ELCHEM SO, 148(4), 2001, pp. G218-G224
Citation: O. Rozeau et al., Comparison between high- and low-dose separation by implanted oxygen MOS transistors for low-power radio-frequency applications, JPN J A P 1, 39(4B), 2000, pp. 2264-2267
Authors:
Perret, C
Boussey, J
Schaeffer, C
Coyaud, M
Citation: C. Perret et al., Analytic modeling, optimization, and realization of cooling devices in silicon technology, IEEE T COMP, 23(4), 2000, pp. 665-672
Citation: J. Boussey et al., Proceedings of MIGAS Fourth Session - "Microelectronics for Telecommunications: Managing High Complexity and Mobility" - June 28-July 4, 2000 - Autrans, France - Preface, MICROEL ENG, 54(1-2), 2000, pp. 1-3
Citation: J. Boussey et G. Reimbold, "Reliability in VLSI Circuits: Operation, Manufacturing and Design" - June28-July 4, 1999 - Autrans, France - Preface, MICROEL ENG, 49(1-2), 1999, pp. 1-2