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Results: 1-14 |
Results: 14
High-deposition rate a-Si : H n-i-p solar cells grown by HWCVD
Authors: Nelson, BP Iwaniczko, E Mahan, AH Wang, Q Xu, YQ Crandall, RS Branz, HM
Citation: Bp. Nelson et al., High-deposition rate a-Si : H n-i-p solar cells grown by HWCVD, THIN SOL FI, 395(1-2), 2001, pp. 292-297
Hydrogen above saturation at silicon vacancies: H-pair reservoirs and metastability sites - art. no. 105503
Authors: Zhang, SB Branz, HM
Citation: Sb. Zhang et Hm. Branz, Hydrogen above saturation at silicon vacancies: H-pair reservoirs and metastability sites - art. no. 105503, PHYS REV L, 8710(10), 2001, pp. 5503
Stand-alone photovoltaic-powered electrochromic smart window
Authors: Deb, SK Lee, SH Tracy, CE Pitts, JR Gregg, BA Branz, HM
Citation: Sk. Deb et al., Stand-alone photovoltaic-powered electrochromic smart window, ELECTR ACT, 46(13-14), 2001, pp. 2125-2130
Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon
Authors: Heck, S Branz, HM
Citation: S. Heck et Hm. Branz, Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon, APPL PHYS L, 79(19), 2001, pp. 3080-3082
Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductors
Authors: Zhang, SB Branz, HM
Citation: Sb. Zhang et Hm. Branz, Nonradiative electron-hole recombination by a low-barrier pathway in hydrogenated silicon semiconductors, PHYS REV L, 84(5), 2000, pp. 967-970
Approaches for large-area a-SiC : H photovoltaic-powered electrochromic window coatings
Authors: Gao, W Liu, P Crandall, RS Lee, SH Benson, DK Branz, HM
Citation: W. Gao et al., Approaches for large-area a-SiC : H photovoltaic-powered electrochromic window coatings, J NON-CRYST, 266, 2000, pp. 1140-1144
Novel electrochromic projection and writing device incorporating an amorphous silicon carbide photodiode
Authors: Gao, W Lee, SH Benson, DK Branz, HM
Citation: W. Gao et al., Novel electrochromic projection and writing device incorporating an amorphous silicon carbide photodiode, J NON-CRYST, 266, 2000, pp. 1233-1237
The hydrogen collision model: theory and experiment
Authors: Branz, HM
Citation: Hm. Branz, The hydrogen collision model: theory and experiment, J NON-CRYST, 266, 2000, pp. 391-396
Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model
Authors: Yelon, A Fritzsche, H Branz, HM
Citation: A. Yelon et al., Electron beam creation of metastable defects in hydrogenated amorphous silicon: hydrogen collision model, J NON-CRYST, 266, 2000, pp. 437-443
Explanation of the limiting thickness observed in low-temperature silicon epitaxy
Authors: Thiesen, J Branz, HM Crandall, RS
Citation: J. Thiesen et al., Explanation of the limiting thickness observed in low-temperature silicon epitaxy, APPL PHYS L, 77(22), 2000, pp. 3589-3591
First a-SiC : H photovoltaic-powered monolithic tandem electrochromic smart window device
Authors: Gao, W Lee, SH Bullock, J Xu, Y Benson, DK Morrison, S Branz, HM
Citation: W. Gao et al., First a-SiC : H photovoltaic-powered monolithic tandem electrochromic smart window device, SOL EN MAT, 59(3), 1999, pp. 243-254
Hydrogen diffusion and mobile hydrogen in amorphous silicon
Authors: Branz, HM
Citation: Hm. Branz, Hydrogen diffusion and mobile hydrogen in amorphous silicon, PHYS REV B, 60(11), 1999, pp. 7725-7727
Hydrogen collision model: Quantitative description of metastability in amorphous silicon
Authors: Branz, HM
Citation: Hm. Branz, Hydrogen collision model: Quantitative description of metastability in amorphous silicon, PHYS REV B, 59(8), 1999, pp. 5498-5512
Light-induced D diffusion measurements in hydrogenated amorphous silicon: Testing H metastability models
Authors: Branz, HM Asher, S Gleskova, H Wagner, S
Citation: Hm. Branz et al., Light-induced D diffusion measurements in hydrogenated amorphous silicon: Testing H metastability models, PHYS REV B, 59(8), 1999, pp. 5513-5520
Risultati: 1-14 |