Authors:
Huth, S
Breitenstein, O
Lambert, U
Huber, A
Citation: S. Huth et al., Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography, MAT SC S PR, 4(1-3), 2001, pp. 39-42
Authors:
Breitenstein, O
Langenkamp, M
Lang, O
Schirrmacher, A
Citation: O. Breitenstein et al., Shunts due to laser scribing of solar cells evaluated by highly sensitive lock-in thermography, SOL EN MAT, 65(1-4), 2001, pp. 55-62
Citation: I. Konovalov et O. Breitenstein, An iterative algorithm for determining depth profiles of collection probability by electron-beam-induced current, SEMIC SCI T, 16(1), 2001, pp. 26-30
Authors:
Huth, S
Breitenstein, O
Huber, A
Dantz, D
Lambert, U
Citation: S. Huth et al., Localization and detailed investigation of gate oxide integrity defects insilicon MOS structures, MICROEL ENG, 59(1-4), 2001, pp. 109-113
Authors:
Breitenstein, O
Langenkamp, M
Altmann, F
Katzer, D
Lindner, A
Eggers, H
Citation: O. Breitenstein et al., Microscopic lock-in thermography investigation of leakage sites in integrated circuits, REV SCI INS, 71(11), 2000, pp. 4155-4160
Authors:
Huth, S
Breitenstein, O
Huber, A
Lambert, U
Citation: S. Huth et al., Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography, J APPL PHYS, 88(7), 2000, pp. 4000-4003