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Citation: T. Roch et al., Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-ray scattering, PHYS ST S-B, 224(1), 2001, pp. 241-245
Authors:
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Citation: Cma. Kapteyn et al., Hole emission from Ge/Si quantum dots studied by time-resolved capacitancespectroscopy, PHYS ST S-B, 224(1), 2001, pp. 261-264
Authors:
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Citation: Ra. Kaindl et al., Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas, PHYS REV L, 86(6), 2001, pp. 1122-1125
Authors:
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Citation: M. Meduna et al., X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy, J APPL PHYS, 89(9), 2001, pp. 4836-4842
Authors:
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Citation: M. Markmann et al., Excitation efficiency of electrons and holes in forward and reverse biasedepitaxially grown Er-doped Si diodes, APPL PHYS L, 78(2), 2001, pp. 210-212
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Citation: K. Brunner et al., Site torsional motion and dispersive excitation hopping transfer in pi-conjugated polymers, J PHYS CH B, 104(16), 2000, pp. 3781-3790
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Citation: J. Stangl et al., Strain-induced self-organized growth of nanostructures: From step bunchingto ordering in quantum dot superlattices, J VAC SCI B, 18(4), 2000, pp. 2187-2192
Authors:
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Brunner, K
Abstreiter, G
Citation: J. Stangl et al., Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice, PHYS REV B, 62(11), 2000, pp. 7229-7236
Authors:
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Brunner, K
Abstreiter, G
Citation: R. Neumann et al., Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces, THIN SOL FI, 380(1-2), 2000, pp. 124-126