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Results:
1-7
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Results: 7
Authors:
Shi, Y
Bu, HM
Yuan, XL
Gu, SL
Shen, B
Han, P
Zhang, R
Zheng, YD
Citation: Y. Shi et al., Switching kinetics of interface states in deep submicrometre SOI n-MOSFETs, SEMIC SCI T, 16(1), 2001, pp. 21-25
Authors:
Yang, HG
Shi, Y
Bu, HM
Wu, J
Zhao, B
Yuan, XL
Shen, B
Han, P
Zhang, R
Zheng, YD
Citation: Hg. Yang et al., Simulation of electron storage in Ge/Si hetero-nanocrystal memory, SOL ST ELEC, 45(5), 2001, pp. 767-771
Authors:
Yuan, XL
Shi, Y
Yang, HG
Bu, HM
Wu, J
Zhao, B
Zhang, R
Zheng, YD
Citation: Xl. Yuan et al., Charging dynamics of Si-quantum dots in tunnel capacitor, ACT PHY C E, 49(10), 2000, pp. 2037-2040
Authors:
Bu, HM
Shi, Y
Yuan, XL
Zheng, YD
Gu, SH
Majima, H
Ishikuro, H
Hiramoto, T
Citation: Hm. Bu et al., Impact of the device scaling on the low-frequency noise in n-MOSFETs, APPL PHYS A, 71(2), 2000, pp. 133-136
Authors:
Shi, Y
Yuan, XL
Wu, J
Bu, HM
Yang, HG
Han, P
Zheng, YD
Hiramoto, T
Citation: Y. Shi et al., Dynamics of tunneling into charge-tunable Si quantum dots, SUPERLATT M, 28(5-6), 2000, pp. 387-392
Authors:
Bu, HM
Shi, Y
Yuan, XL
Wu, J
Gu, SL
Zheng, YD
Majima, H
Ishikuro, H
Hiramoto, T
Citation: Hm. Bu et al., Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels, APPL PHYS L, 76(22), 2000, pp. 3259-3261
Authors:
Li, WP
Zhang, R
Zhou, YG
Yin, J
Bu, HM
Luo, ZY
Shen, B
Shi, Y
Jiang, RL
Gu, SL
Liu, ZG
Zheng, YD
Huang, ZC
Citation: Wp. Li et al., Studies of metal-ferroelectric-GaN structures, APPL PHYS L, 75(16), 1999, pp. 2416-2417
Risultati:
1-7
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