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Results:
1-13
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Results: 13
Authors:
Piwonski, T
Sajewicz, P
Kubica, JM
Zbroszczyk, M
Reginski, K
Mroziewicz, B
Bugajski, M
Citation: T. Piwonski et al., Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy, MICROW OPT, 29(2), 2001, pp. 75-77
Authors:
Machowska-Podsiadlo, E
Bugajski, M
Pawlowski, S
Citation: E. Machowska-podsiadlo et al., Electron states in the electrostatically formed quantum dots, ACT PHY P B, 32(2), 2001, pp. 503-508
Authors:
Ochalski, TJ
Gil, B
Bigenwald, P
Bugajski, M
Wojcik, A
Lefebvre, P
Taliercio, T
Grandjean, N
Massies, J
Citation: Tj. Ochalski et al., Dual contribution to the Stokes shift in InGaN-GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 111-114
Authors:
Bugajski, M
Reginski, K
Mroziewicz, B
Kubica, JM
Sajewicz, P
Piwonski, T
Zbroszczyk, M
Citation: M. Bugajski et al., High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers, OPT APPL, 31(2), 2001, pp. 267-271
Authors:
Bugajski, M
Muszalski, J
Mroziewicz, B
Reginski, K
Ochalski, TJ
Citation: M. Bugajski et al., Resonant cavity enhanced photonic devices, OPT APPL, 31(2), 2001, pp. 273-288
Authors:
Wongmanerod, S
Sernelius, BE
Holtz, PO
Monemar, B
Mauritz, O
Reginski, K
Bugajski, M
Citation: S. Wongmanerod et al., Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 61(4), 2000, pp. 2794-2798
Authors:
Teisseyre, H
Ochalski, TJ
Perlin, P
Suski, T
Leszczynski, M
Grzegory, I
Bockowski, M
Lucznik, B
Bugajski, M
Palczewska, M
Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Authors:
Wongmanerod, S
Paskov, PP
Holtz, PO
Monemar, B
Mauritz, O
Reginski, K
Bugajski, M
Citation: S. Wongmanerod et al., Magneto-optical studies of highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 62(23), 2000, pp. 15952-15961
Authors:
Reginski, K
Muszalski, J
Bugajski, M
Ochalski, T
Kubica, JM
Zbroszczyk, M
Katcki, J
Ratajczak, J
Citation: K. Reginski et al., MBE growth of planar microcavities with distributed Bragg reflectors, THIN SOL FI, 367(1-2), 2000, pp. 290-294
Authors:
Katcki, J
Ratajczak, J
Adamczewska, J
Phillipp, F
Jin-Phillipp, NY
Reginski, K
Bugajski, M
Citation: J. Katcki et al., Formation of dislocations in InGaAs/GaAs heterostructures, PHYS ST S-A, 171(1), 1999, pp. 275-282
Authors:
Wrobel, J
Jaroszynski, J
Dietl, T
Reginski, K
Bugajski, M
Citation: J. Wrobel et al., Conductance noise of submicron wires in the regime of quantum Hall effect, PHYSICA B, 258, 1998, pp. 69-73
Authors:
Wongmanerod, S
Holtz, PO
Sernelius, B
Reginski, K
Bugajski, M
Godlewski, M
Mauritz, O
Zhao, QX
Bergman, JP
Monemar, B
Citation: S. Wongmanerod et al., Optical properties of p-type modulation doped GaAs/AlGaAs quantum wells, PHYS ST S-B, 210(2), 1998, pp. 615-620
Authors:
Wrobel, J
Dietl, T
Reginski, K
Bugajski, M
Citation: J. Wrobel et al., Transport and tunneling within a compressible electron liquid in wires andrings of GaAs/AlxGa1-xAs heterostructures, PHYS REV B, 58(24), 1998, pp. 16252-16261
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1-13
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