Authors: Potter, R Mazzucato, S Balkan, N Adams, MJ Chalker, PR Joyce, TB Bullough, TJ

Citation: R. Potter et al., The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1-xAs1-yNy/GaAs laser structures, SUPERLATT M, 29(2), 2001, pp. 169-186

Authors: Chalker, PR Davock, H Thomas, S Joyce, TB Bullough, TJ Potter, RJ Balkan, N

Citation: Pr. Chalker et al., Compositional variation in as-grown GaInNAs/GaAs quantum well structures, J CRYST GR, 233(1-2), 2001, pp. 1-4

Authors: Briantseva, TA Bullough, TJ Lioubtchenko, DV Markov, IA Tolmachev, EM

Citation: Ta. Briantseva et al., SAW diagnostics of GaAs surface structure, PHYSICA B, 263, 1999, pp. 84-86

Authors: Briantseva, TA Lebedeva, ZM Markov, IA Bullough, TJ Lioubtchenko, DV

Citation: Ta. Briantseva et al., Process-induced modification to the surface of crystalline GaAs measured by photometry, APPL SURF S, 143(1-4), 1999, pp. 223-228

Authors: Jothilingam, R Farrell, T Joyce, TB Bullough, TJ Goodhew, PJ

Citation: R. Jothilingam et al., Comparison of in situ optical reflectance and post-growth characterisationfor quantitative composition and thickness determination of AlxGa1-xAs, VACUUM, 53(1-2), 1999, pp. 7-10

Authors: Hill, D Farrell, T Bullough, TJ

Citation: D. Hill et al., Incorporation of Ga metalorganic precursors during transients at the startof GaAs growth in CBE, THIN SOL FI, 344, 1999, pp. 554-557