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Results: 1-13 |
Results: 13
Wavelength dependence of photooxidation vs photofragmentation of chromocene
Authors: Muraoka, PT Byun, D Zink, JI
Citation: Pt. Muraoka et al., Wavelength dependence of photooxidation vs photofragmentation of chromocene, J PHYS CH A, 105(38), 2001, pp. 8665-8671
Reduction of defects in GaN on reactive ion beam treated sapphire by annealing
Authors: Byun, D Jhin, J Cho, S Kim, J Lee, SJ Hong, CH Kim, G Choi, WK
Citation: D. Byun et al., Reduction of defects in GaN on reactive ion beam treated sapphire by annealing, PHYS ST S-B, 228(1), 2001, pp. 315-318
Enhanced IL-18 expression in common skin tumors
Authors: Park, H Byun, D Kim, TS Kim, YI Kang, JS Hahm, ES Kim, SH Lee, WJ Song, HK Yoon, DY Kang, CJ Lee, C Houh, D Kim, H Cho, B Kim, Y Yang, YH Min, KH Cho, DH
Citation: H. Park et al., Enhanced IL-18 expression in common skin tumors, IMMUNOL LET, 79(3), 2001, pp. 215-219
Localization of the IGF binding domain and evaluation of the role of cysteine residues in IGF binding in IGF binding protein-4
Authors: Byun, D Mohan, S Baylink, DJ Qin, X
Citation: D. Byun et al., Localization of the IGF binding domain and evaluation of the role of cysteine residues in IGF binding in IGF binding protein-4, J ENDOCR, 169(1), 2001, pp. 135-143
Photocatalytic TiO2 deposition by chemical vapor deposition
Authors: Byun, D Jin, Y Kim, B Lee, JK Park, D
Citation: D. Byun et al., Photocatalytic TiO2 deposition by chemical vapor deposition, J HAZARD M, 73(2), 2000, pp. 199-206
Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge
Authors: Kim, J Byun, D Kim, JS Kum, DW
Citation: J. Kim et al., Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge, J CRYST GR, 210(4), 2000, pp. 478-486
Studies on human pregnancy-induced insulin-like growth factor (IGF)-binding protein-4 proteases in serum: Determination of IGF-II dependency and localization of cleavage site
Authors: Byun, D Mohan, S Kim, C Suh, K Yoo, M Lee, H Baylink, DJ Qin, XZ
Citation: D. Byun et al., Studies on human pregnancy-induced insulin-like growth factor (IGF)-binding protein-4 proteases in serum: Determination of IGF-II dependency and localization of cleavage site, J CLIN END, 85(1), 2000, pp. 373-381
Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films
Authors: Kim, HJ Byun, D Kim, G Kum, DW
Citation: Hj. Kim et al., Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films, J APPL PHYS, 87(11), 2000, pp. 7940-7945
Excited states and gas phase photofragmentation of palladium and platinum hexafluoroacetylacetonates
Authors: Muraoka, P Byun, D Zink, JI
Citation: P. Muraoka et al., Excited states and gas phase photofragmentation of palladium and platinum hexafluoroacetylacetonates, COORD CH RE, 208, 2000, pp. 193-211
Sensitive wavelength dependence of PdC and Pd formation from photolysis ofbis(hexafluoroacetylacetonato)palladium(II)
Authors: Muraoka, P Byun, D Zink, JI
Citation: P. Muraoka et al., Sensitive wavelength dependence of PdC and Pd formation from photolysis ofbis(hexafluoroacetylacetonato)palladium(II), J AM CHEM S, 122(6), 2000, pp. 1227-1228
Sensitive wavelength dependence of PdC and Pd formation from photolysis ofBis(hexafluoroacetylacetonato)palladium(II) (vol 122, pg 1227, 2000)
Authors: Muraoka, P Byun, D Zink, JI
Citation: P. Muraoka et al., Sensitive wavelength dependence of PdC and Pd formation from photolysis ofBis(hexafluoroacetylacetonato)palladium(II) (vol 122, pg 1227, 2000), J AM CHEM S, 122(23), 2000, pp. 5670-5670
Sapphire surface modified by a reactive ion beam for GaN depositions
Authors: Kim, HJ Kim, J Byun, D Park, D Kum, DW
Citation: Hj. Kim et al., Sapphire surface modified by a reactive ion beam for GaN depositions, J KOR PHYS, 35, 1999, pp. S162-S164
New pretreatment method of sapphire for GaN deposition
Authors: Byun, D Kim, HJ Hong, CH Park, CS Kim, G Koh, SK Choi, WK Kum, DW
Citation: D. Byun et al., New pretreatment method of sapphire for GaN deposition, PHYS ST S-A, 176(1), 1999, pp. 643-648
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