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Results: 1-25 | 26-44
Results: 1-25/44
DEFECT STATES IN THE INTRINSIC LAYER OF AMORPHOUS-SILICON SOLAR-CELLSSTUDIED BY THE CONSTANT-PHOTOCURRENT METHOD
Authors: SLADEK P STAHEL P CABARROCAS PRI MORIN P
Citation: P. Sladek et al., DEFECT STATES IN THE INTRINSIC LAYER OF AMORPHOUS-SILICON SOLAR-CELLSSTUDIED BY THE CONSTANT-PHOTOCURRENT METHOD, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(4), 1998, pp. 1049-1061
IN-SITU KELVIN PROBE AND ELLIPSOMETRY STUDY OF THE DOPING OF A-SI-H AND A-SIC-H LAYERS - CORRELATION WITH SOLAR-CELL PARAMETERS
Authors: HADJADJ A FAVRE M EQUER B CABARROCAS PRI
Citation: A. Hadjadj et al., IN-SITU KELVIN PROBE AND ELLIPSOMETRY STUDY OF THE DOPING OF A-SI-H AND A-SIC-H LAYERS - CORRELATION WITH SOLAR-CELL PARAMETERS, Solar energy materials and solar cells, 51(2), 1998, pp. 145-153
EFFECT OF THE NANOPARTICLES ON THE STRUCTURE AND CRYSTALLIZATION OF AMORPHOUS-SILICON THIN-FILMS PRODUCED BY RF GLOW-DISCHARGE
Authors: BERTRAN E SHARMA SN VIERA G COSTA J STAHEL P CABARROCAS PRI
Citation: E. Bertran et al., EFFECT OF THE NANOPARTICLES ON THE STRUCTURE AND CRYSTALLIZATION OF AMORPHOUS-SILICON THIN-FILMS PRODUCED BY RF GLOW-DISCHARGE, Journal of materials research, 13(9), 1998, pp. 2476-2479
OPTICAL AND TRANSPORT-PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS PREPARED BY EXCIMER-LASER ASSISTED RF GLOW-DISCHARGE DEPOSITION
Authors: CABARROCAS PRI LAYADI N KUNST M CLERC C BERNAS H
Citation: Pri. Cabarrocas et al., OPTICAL AND TRANSPORT-PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS PREPARED BY EXCIMER-LASER ASSISTED RF GLOW-DISCHARGE DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 436-443
LOW-TEMPERATURE GROWTH OF HIGHLY CRYSTALLIZED SILICON THIN-FILMS USING HYDROGEN AND ARGON DILUTION
Authors: HAMMA S CABARROCAS PRI
Citation: S. Hamma et Pri. Cabarrocas, LOW-TEMPERATURE GROWTH OF HIGHLY CRYSTALLIZED SILICON THIN-FILMS USING HYDROGEN AND ARGON DILUTION, Journal of non-crystalline solids, 230, 1998, pp. 852-856
NANOPARTICLE FORMATION IN LOW-PRESSURE SILANE PLASMAS - BRIDGING THE GAP BETWEEN A-SI-H AND MU-C-SI FILMS
Authors: CABARROCAS PRI HAMMA S SHARMA SN VIERA G BERTRAN E COSTA J
Citation: Pri. Cabarrocas et al., NANOPARTICLE FORMATION IN LOW-PRESSURE SILANE PLASMAS - BRIDGING THE GAP BETWEEN A-SI-H AND MU-C-SI FILMS, Journal of non-crystalline solids, 230, 1998, pp. 871-875
IN-SITU CHARACTERIZATION OF MICROCRYSTALLINE SILICON BY TIME-RESOLVEDMICROWAVE CONDUCTIVITY
Authors: BRENOT R BULKIN P CABARROCAS PRI DREVILLON B VANDERHAGHEN R
Citation: R. Brenot et al., IN-SITU CHARACTERIZATION OF MICROCRYSTALLINE SILICON BY TIME-RESOLVEDMICROWAVE CONDUCTIVITY, Journal of non-crystalline solids, 230, 1998, pp. 1001-1005
PROPERTIES OF A NEW A-SI-H-LIKE MATERIAL - HYDROGENATED POLYMORPHOUS SILICON
Authors: LONGEAUD C KLEIDER JP CABARROCAS PRI HAMMA S MEAUDRE R MEAUDRE M
Citation: C. Longeaud et al., PROPERTIES OF A NEW A-SI-H-LIKE MATERIAL - HYDROGENATED POLYMORPHOUS SILICON, Journal of non-crystalline solids, 230, 1998, pp. 96-99
METASTABILITY STUDIES IN SILICON THIN-FILMS - FROM SHORT-RANGE ORDERED TO MEDIUM AND LONG-RANGE ORDERED MATERIALS
Authors: STAHEL P HAMMA S SLADEK P CABARROCAS PRI
Citation: P. Stahel et al., METASTABILITY STUDIES IN SILICON THIN-FILMS - FROM SHORT-RANGE ORDERED TO MEDIUM AND LONG-RANGE ORDERED MATERIALS, Journal of non-crystalline solids, 230, 1998, pp. 276-280
THE HYDROGEN EFFUSION INDUCED STRUCTURAL-CHANGES AND DEFECTS IN HYDROGENATED AMORPHOUS SIGE FILMS - DEPENDENCE UPON THE MICROSTRUCTURE
Authors: SLADEK P STAHEL P THEYE ML CABARROCAS PRI
Citation: P. Sladek et al., THE HYDROGEN EFFUSION INDUCED STRUCTURAL-CHANGES AND DEFECTS IN HYDROGENATED AMORPHOUS SIGE FILMS - DEPENDENCE UPON THE MICROSTRUCTURE, Journal of non-crystalline solids, 230, 1998, pp. 437-441
OPTIMUM DOPING LEVEL IN A-SI-H AND A-SIC-H MATERIALS
Authors: HADJADJ A STAHEL P CABARROCAS PRI PARET V BOUNOUH Y MARTIN JC
Citation: A. Hadjadj et al., OPTIMUM DOPING LEVEL IN A-SI-H AND A-SIC-H MATERIALS, Journal of applied physics, 83(2), 1998, pp. 830-836
NEW BUFFER CONCEPT INHERENT TO PULSED-LASER INDUCED EPITAXY
Authors: GUEDJ C BOULMER J NOUET G GODET C CABARROCAS PRI
Citation: C. Guedj et al., NEW BUFFER CONCEPT INHERENT TO PULSED-LASER INDUCED EPITAXY, Applied physics letters, 72(18), 1998, pp. 2292-2294
QUANTITATIVE IN-SITU KELVIN PROBE STUDY OF BORON DOPING IN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON CARBIDE
Authors: HADJADJ A CABARROCAS PRI EQUER B
Citation: A. Hadjadj et al., QUANTITATIVE IN-SITU KELVIN PROBE STUDY OF BORON DOPING IN HYDROGENATED AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON CARBIDE, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 76(6), 1997, pp. 941-950
PHOTOEMISSION MEASUREMENTS ON ALUMINUM AND AMORPHOUS-SILICON BY PULSED-LASER ILLUMINATION IN PRESENCE OF A PLASMA
Authors: LANDWEER GEN CABARROCAS PRI
Citation: Gen. Landweer et Pri. Cabarrocas, PHOTOEMISSION MEASUREMENTS ON ALUMINUM AND AMORPHOUS-SILICON BY PULSED-LASER ILLUMINATION IN PRESENCE OF A PLASMA, Applied surface science, 110, 1997, pp. 579-583
LONG-RANGE EFFECTS OF HYDROGEN DURING MICROCRYSTALLINE SILICON GROWTH
Authors: HAMMA S CABARROCAS PRI
Citation: S. Hamma et Pri. Cabarrocas, LONG-RANGE EFFECTS OF HYDROGEN DURING MICROCRYSTALLINE SILICON GROWTH, Thin solid films, 296(1-2), 1997, pp. 11-14
TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS FOR THE CHARACTERIZATION OF TRANSPORT-PROPERTIES IN THIN-FILM MICROCRYSTALLINE SILICON
Authors: BRENOT R VANDERHAGHEN R DREVILLON B FRENCH I CABARROCAS PRI
Citation: R. Brenot et al., TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS FOR THE CHARACTERIZATION OF TRANSPORT-PROPERTIES IN THIN-FILM MICROCRYSTALLINE SILICON, Thin solid films, 296(1-2), 1997, pp. 94-97
COMPTON PROFILES OF AMORPHOUS AND HYDROGENATED AMORPHOUS-SILICON
Authors: BELLIN C CABARROCAS PRI ZELLAMA K THEYE ML LOUPIAS G
Citation: C. Bellin et al., COMPTON PROFILES OF AMORPHOUS AND HYDROGENATED AMORPHOUS-SILICON, Solid state communications, 104(4), 1997, pp. 193-197
IN-SITU CORRELATION BETWEEN THE OPTICAL AND ELECTRICAL-PROPERTIES OF THIN INTRINSIC AND N-TYPE MICROCRYSTALLINE SILICON FILMS
Authors: HAMMA S CABARROCAS PRI
Citation: S. Hamma et Pri. Cabarrocas, IN-SITU CORRELATION BETWEEN THE OPTICAL AND ELECTRICAL-PROPERTIES OF THIN INTRINSIC AND N-TYPE MICROCRYSTALLINE SILICON FILMS, Journal of applied physics, 81(11), 1997, pp. 7282-7288
DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS
Authors: EBOTHE J CABARROCAS PRI GODET C EQUER B
Citation: J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109
BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY
Authors: GUEDJ C BOULMER J BOUCHIER D CLERC C CALVARIN G GODET C CABARROCAS PRI HOUZE F MENCARAGLIA D
Citation: C. Guedj et al., BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 102, 1996, pp. 28-32
HYDROGEN-EFFUSION-INDUCED STRUCTURAL-CHANGES AND DEFECTS IN A-SI-H FILMS - DEPENDENCE UPON THE FILM MICROSTRUCTURE
Authors: ZELLAMA K CHAHED L SLADEK P THEYE ML VONBARDELEBEN JH CABARROCAS PRI
Citation: K. Zellama et al., HYDROGEN-EFFUSION-INDUCED STRUCTURAL-CHANGES AND DEFECTS IN A-SI-H FILMS - DEPENDENCE UPON THE FILM MICROSTRUCTURE, Physical review. B, Condensed matter, 53(7), 1996, pp. 3804-3812
MICROCRYSTALLINE SILICON GROWTH BY THE LAYER-BY-LAYER TECHNIQUE - LONG-TERM EVOLUTION AND NUCLEATION MECHANISMS
Authors: CABARROCAS PRI LAYADI N DREVILLON B SOLOMON I
Citation: Pri. Cabarrocas et al., MICROCRYSTALLINE SILICON GROWTH BY THE LAYER-BY-LAYER TECHNIQUE - LONG-TERM EVOLUTION AND NUCLEATION MECHANISMS, Journal of non-crystalline solids, 200, 1996, pp. 871-874
ROLE OF SI-H BONDING IN A-SI-H METASTABILITY
Authors: GODET C CABARROCAS PRI
Citation: C. Godet et Pri. Cabarrocas, ROLE OF SI-H BONDING IN A-SI-H METASTABILITY, Journal of applied physics, 80(1), 1996, pp. 97-102
NEW FEATURES OF THE LAYER-BY-LAYER DEPOSITION OF MICROCRYSTALLINE SILICON FILMS REVEALED BY SPECTROSCOPIC ELLIPSOMETRY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY
Authors: CABARROCAS PRI HAMMA S HADJADJ A BERTOMEU J ANDREU J
Citation: Pri. Cabarrocas et al., NEW FEATURES OF THE LAYER-BY-LAYER DEPOSITION OF MICROCRYSTALLINE SILICON FILMS REVEALED BY SPECTROSCOPIC ELLIPSOMETRY AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 69(4), 1996, pp. 529-531
MULTILAYERED SILICON SILICON-NITRIDE THIN-FILMS DEPOSITED BY PLASMA-CVD - EFFECTS OF CRYSTALLIZATION
Authors: DUTTA J REANEY IM CABARROCAS PRI HOFMANN H
Citation: J. Dutta et al., MULTILAYERED SILICON SILICON-NITRIDE THIN-FILMS DEPOSITED BY PLASMA-CVD - EFFECTS OF CRYSTALLIZATION, Nanostructured materials, 6(5-8), 1995, pp. 843-846
Risultati: 1-25 | 26-44